Datasheets
IRG4RC10KTRLPBF by:

Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3

Part Details for IRG4RC10KTRLPBF by Infineon Technologies AG

Overview of IRG4RC10KTRLPBF by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Part Details for IRG4RC10KTRLPBF

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IRG4RC10KTRLPBF Part Data Attributes:

IRG4RC10KTRLPBF Infineon Technologies AG
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IRG4RC10KTRLPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description DPAK-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Collector Current-Max (IC) 9 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application MOTOR CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 417 ns
Turn-on Time-Nom (ton) 38 ns

Alternate Parts for IRG4RC10KTRLPBF

This table gives cross-reference parts and alternative options found for IRG4RC10KTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4RC10KTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4RC10KTRLPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10KTRLPBF vs IRG4RC10KTRLPBF
IRG4RC10KTRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC10KTRLPBF vs IRG4RC10KTRPBF
IRG4RC10KTRRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC10KTRLPBF vs IRG4RC10KTRRPBF
IRG4RC10KPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10KTRLPBF vs IRG4RC10KPBF
IRG4RC10K Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10KTRLPBF vs IRG4RC10K
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10KTRLPBF vs IRG4RC10KTRL
IRG4RC10KTRRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10KTRLPBF vs IRG4RC10KTRRPBF
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC10KTRLPBF vs IRG4RC10KTRL
IRG4RC10KTRPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10KTRLPBF vs IRG4RC10KTRPBF
Part Number Description Manufacturer Compare
IRG4RC10KTRL Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 Infineon Technologies AG IRG4RC10KTRLPBF vs IRG4RC10KTRL
HGTD3N60B3 Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-251AA, PLASTIC PACKAGE-3 Harris Semiconductor IRG4RC10KTRLPBF vs HGTD3N60B3
IRG4RC10K Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10KTRLPBF vs IRG4RC10K
SGD04N60BUMA1 Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3 Infineon Technologies AG IRG4RC10KTRLPBF vs SGD04N60BUMA1
HGTD3N60B3S Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation IRG4RC10KTRLPBF vs HGTD3N60B3S
SGR2N60UFTM Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRG4RC10KTRLPBF vs SGR2N60UFTM
STGD3NB60K 10A, 600V, N-CHANNEL IGBT, TO-252AA, DPAK-3 STMicroelectronics IRG4RC10KTRLPBF vs STGD3NB60K
IRG4RC10KPBF Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 International Rectifier IRG4RC10KTRLPBF vs IRG4RC10KPBF
HGTD3N60B3S9A Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA Fairchild Semiconductor Corporation IRG4RC10KTRLPBF vs HGTD3N60B3S9A
STGD3NB60HT4 6A, 600V, N-CHANNEL IGBT, TO-252, DPAK-3 STMicroelectronics IRG4RC10KTRLPBF vs STGD3NB60HT4

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