Part Details for HGTD3N60B3S9A by Fairchild Semiconductor Corporation
Overview of HGTD3N60B3S9A by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
Part Details for HGTD3N60B3S9A
HGTD3N60B3S9A CAD Models
HGTD3N60B3S9A Part Data Attributes:
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HGTD3N60B3S9A
Fairchild Semiconductor Corporation
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Datasheet
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HGTD3N60B3S9A
Fairchild Semiconductor Corporation
Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 7 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 175 ns | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 33.3 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 335 ns | |
| Turn-on Time-Nom (ton) | 34 ns |
Alternate Parts for HGTD3N60B3S9A
This table gives cross-reference parts and alternative options found for HGTD3N60B3S9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of HGTD3N60B3S9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4RC10KTRLPBF | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | Infineon Technologies AG | HGTD3N60B3S9A vs IRG4RC10KTRLPBF |
| IRG4RC10KTRL | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | HGTD3N60B3S9A vs IRG4RC10KTRL |
| IRG4RC10KTRL | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | Infineon Technologies AG | HGTD3N60B3S9A vs IRG4RC10KTRL |
| STGD3NB60HT4 | 6A, 600V, N-CHANNEL IGBT, TO-252, DPAK-3 | STMicroelectronics | HGTD3N60B3S9A vs STGD3NB60HT4 |
| HGTD3N60B3 | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-251AA, PLASTIC PACKAGE-3 | Harris Semiconductor | HGTD3N60B3S9A vs HGTD3N60B3 |
| IRG4RC10KTR | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | HGTD3N60B3S9A vs IRG4RC10KTR |
| HGTD3N60C3S | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA | Fairchild Semiconductor Corporation | HGTD3N60B3S9A vs HGTD3N60C3S |
| HGTD3N60C3 | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA | Harris Semiconductor | HGTD3N60B3S9A vs HGTD3N60C3 |
| SGR2N60UFTM | Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | HGTD3N60B3S9A vs SGR2N60UFTM |
| SGR6N60UFTF | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | HGTD3N60B3S9A vs SGR6N60UFTF |