Part Details for SGD04N60 by Infineon Technologies AG
Overview of SGD04N60 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Part Details for SGD04N60
SGD04N60 CAD Models
SGD04N60 Part Data Attributes:
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SGD04N60
Infineon Technologies AG
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Datasheet
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SGD04N60
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 9.4A I(C), 600V V(BR)CES, N-Channel, TO-252AA, GREEN, PLASTIC, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-252AA | |
| Package Description | GREEN, PLASTIC, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 9.4 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE | |
| Fall Time-Max (tf) | 84 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 22 ns | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 368 ns | |
| Turn-on Time-Nom (ton) | 38 ns |
Alternate Parts for SGD04N60
This table gives cross-reference parts and alternative options found for SGD04N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SGD04N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRG4RC10KTRLPBF | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | Infineon Technologies AG | SGD04N60 vs IRG4RC10KTRLPBF |
| IRG4RC10KTRL | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | SGD04N60 vs IRG4RC10KTRL |
| IRG4RC10KTRL | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | Infineon Technologies AG | SGD04N60 vs IRG4RC10KTRL |
| STGD3NB60HT4 | 6A, 600V, N-CHANNEL IGBT, TO-252, DPAK-3 | STMicroelectronics | SGD04N60 vs STGD3NB60HT4 |
| HGTD3N60B3 | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-251AA, PLASTIC PACKAGE-3 | Harris Semiconductor | SGD04N60 vs HGTD3N60B3 |
| IRG4RC10KTR | Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3 | International Rectifier | SGD04N60 vs IRG4RC10KTR |
| HGTD3N60C3S | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA | Fairchild Semiconductor Corporation | SGD04N60 vs HGTD3N60C3S |
| HGTD3N60C3 | Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-251AA | Harris Semiconductor | SGD04N60 vs HGTD3N60C3 |
| HGTD3N60B3S9A | Insulated Gate Bipolar Transistor, 7A I(C), 600V V(BR)CES, N-Channel, TO-252AA | Fairchild Semiconductor Corporation | SGD04N60 vs HGTD3N60B3S9A |
| SGR2N60UFTM | Insulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | SGD04N60 vs SGR2N60UFTM |