Datasheets
RZ1214B65Y by:

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN,

Part Details for RZ1214B65Y by Advanced Semiconductor Inc

Overview of RZ1214B65Y by Advanced Semiconductor Inc

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Applications Space Technology Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Part Details for RZ1214B65Y

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RZ1214B65Y Part Data Attributes:

RZ1214B65Y Advanced Semiconductor Inc
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RZ1214B65Y Advanced Semiconductor Inc RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN,
Part Life Cycle Code Active
Ihs Manufacturer ASI SEMICONDUCTOR INC
Package Description FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 6 A
Configuration SINGLE
Highest Frequency Band L BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 180 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for RZ1214B65Y

This table gives cross-reference parts and alternative options found for RZ1214B65Y. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RZ1214B65Y, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
933783040114 TRANSISTOR L BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors RZ1214B65Y vs 933783040114
PH1214-4M TRANSISTOR,BJT,NPN,65V V(BR)CEO,875MA I(C),FO-41BVAR TE Connectivity RZ1214B65Y vs PH1214-4M
AM81214-030 RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.250 INCH, FM-2 Advanced Semiconductor Inc RZ1214B65Y vs AM81214-030
ALR060 RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.310 INCH, FM-2 Advanced Semiconductor Inc RZ1214B65Y vs ALR060
ALR030 RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, Advanced Semiconductor Inc RZ1214B65Y vs ALR030
PH1214-55EL RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 MACOM RZ1214B65Y vs PH1214-55EL
PH1214-6M TRANSISTOR,BJT,NPN,65V V(BR)CEO,1.3A I(C),FO-41BVAR TE Connectivity RZ1214B65Y vs PH1214-6M
ALR015 RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, Advanced Semiconductor Inc RZ1214B65Y vs ALR015
PH1214-12M RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT, HERMETIC SEALED, METAL CERAMIC PACKAGE-2 MACOM RZ1214B65Y vs PH1214-12M
PH1214-12M TRANSISTOR,BJT,NPN,70V V(BR)CEO,1.3A I(C),FO-41BVAR TE Connectivity RZ1214B65Y vs PH1214-12M

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