Datasheets
RFD14N06LSM by:

14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Details for RFD14N06LSM by Intersil Corporation

Overview of RFD14N06LSM by Intersil Corporation

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Part Details for RFD14N06LSM

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RFD14N06LSM Part Data Attributes

RFD14N06LSM Intersil Corporation
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RFD14N06LSM Intersil Corporation 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD14N06LSM

This table gives cross-reference parts and alternative options found for RFD14N06LSM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N06LSM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD14N06LSM Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD14N06LSM vs RFD14N06LSM
Part Number Description Manufacturer Compare
RF1S42N03LSM9A 42A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation RFD14N06LSM vs RF1S42N03LSM9A
RFD16N02LSM 16A, 20V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RFD14N06LSM vs RFD16N02LSM
RF1S42N03LSM 42A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC RFD14N06LSM vs RF1S42N03LSM
RF1S640SM 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Rochester Electronics LLC RFD14N06LSM vs RF1S640SM
MTB60N05HDL 60A, 50V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 Rochester Electronics LLC RFD14N06LSM vs MTB60N05HDL
RFD16N06LESM 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RFD14N06LSM vs RFD16N06LESM
RFD15N06LESM 15A, 60V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC RFD14N06LSM vs RFD15N06LESM
IRFZ44VZS Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 International Rectifier RFD14N06LSM vs IRFZ44VZS
RF1S50N06LESM9A 50A, 80V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation RFD14N06LSM vs RF1S50N06LESM9A
PSMN015-60PS 50A, 60V, 0.0148ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors RFD14N06LSM vs PSMN015-60PS

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