Datasheets
RFD14N06LSM by:

Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Details for RFD14N06LSM by Harris Semiconductor

Overview of RFD14N06LSM by Harris Semiconductor

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Part Details for RFD14N06LSM

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RFD14N06LSM Part Data Attributes

RFD14N06LSM Harris Semiconductor
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RFD14N06LSM Harris Semiconductor Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 48 W
Power Dissipation-Max (Abs) 40 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns

Alternate Parts for RFD14N06LSM

This table gives cross-reference parts and alternative options found for RFD14N06LSM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N06LSM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD14N06LSM 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD14N06LSM vs RFD14N06LSM
Part Number Description Manufacturer Compare
RFD16N06LESM9A 16A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation RFD14N06LSM vs RFD16N06LESM9A
PSMN8R7-80PS Power Field-Effect Transistor Nexperia RFD14N06LSM vs PSMN8R7-80PS
PSMN025-100D 47A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, DPAK-3 NXP Semiconductors RFD14N06LSM vs PSMN025-100D
PSMN012-80PS Power Field-Effect Transistor Nexperia RFD14N06LSM vs PSMN012-80PS
PSMN002-25P 75A, 25V, 0.0029ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors RFD14N06LSM vs PSMN002-25P
BUK7509-75A 75A, 75V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors RFD14N06LSM vs BUK7509-75A
RFD16N03LSM9A Power Field-Effect Transistor, 16A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation RFD14N06LSM vs RFD16N03LSM9A
PHP54N06T Power Field-Effect Transistor Nexperia RFD14N06LSM vs PHP54N06T
IRF1010NSTRR Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier RFD14N06LSM vs IRF1010NSTRR
BUK9506-75B,127 N-channel TrenchMOS logic level FET TO-220 3-Pin NXP Semiconductors RFD14N06LSM vs BUK9506-75B,127

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