Datasheets
RFD12N06RLE by:

18A, 60V, 0.063ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Part Details for RFD12N06RLE by Rochester Electronics LLC

Overview of RFD12N06RLE by Rochester Electronics LLC

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Part Details for RFD12N06RLE

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RFD12N06RLE Part Data Attributes:

RFD12N06RLE Rochester Electronics LLC
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RFD12N06RLE Rochester Electronics LLC 18A, 60V, 0.063ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Pbfree Code No
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.063 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFD12N06RLE

This table gives cross-reference parts and alternative options found for RFD12N06RLE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD12N06RLE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD12N06RLE 12A, 60V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation RFD12N06RLE vs RFD12N06RLE
RFD12N06RLE Power Field-Effect Transistor, 18A I(D), 60V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation RFD12N06RLE vs RFD12N06RLE
Part Number Description Manufacturer Compare
RFD3055 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Rochester Electronics LLC RFD12N06RLE vs RFD3055
SPP10N10 10.3A, 100V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN Rochester Electronics LLC RFD12N06RLE vs SPP10N10
FQA24N50 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN Rochester Electronics LLC RFD12N06RLE vs FQA24N50
2N6768 Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier RFD12N06RLE vs 2N6768
IRF621R 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFD12N06RLE vs IRF621R
IRF610B 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN Rochester Electronics LLC RFD12N06RLE vs IRF610B
934056482118 23A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 NXP Semiconductors RFD12N06RLE vs 934056482118
IRF720R 3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFD12N06RLE vs IRF720R
FQP5P20 4.8A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN Rochester Electronics LLC RFD12N06RLE vs FQP5P20
FDB14AN06LA0 10A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Rochester Electronics LLC RFD12N06RLE vs FDB14AN06LA0

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