Parametric results for: NE25139-T1 under RF Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Feedback Cap-Max (Crss) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Gain-Min (Gp) Surface Mount

LOW NOISE 11

16 hits Apply

SOURCE 11

16 hits Apply

Configuration (1)

SINGLE 16

16 hits Apply

DS Breakdown Voltage-Min (1)

13 V 15

16 hits Apply

Drain Current-Max (ID) (4)

15 mA 2 25 mA 2 35 mA 2 40 mA 4

Min (A) - Max (A)

16 hits Apply

METAL SEMICONDUCTOR 16

16 hits Apply

0.03 pF 16

16 hits Apply

Highest Frequency Band (1)

ULTRA HIGH FREQUENCY BAND 16

16 hits Apply

R-PDSO-G4 16

16 hits Apply

e0 1

16 hits Apply

Manufacturer (3)

California Eastern Laboratories (CEL) 6 NEC Electronics America Inc 5 Renesas Electronics Corporation 5

16 hits Apply

Number of Elements (1)

1 16

16 hits Apply

Number of Terminals (1)

4 16

16 hits Apply

DEPLETION MODE 10 DUAL GATE, DEPLETION MODE 6

16 hits Apply

125.0 °C 10

16 hits Apply

PLASTIC/EPOXY 16

16 hits Apply

RECTANGULAR 16

16 hits Apply

SMALL OUTLINE 16

16 hits Apply

Obsolete 16

16 hits Apply

No 1

16 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 16

16 hits Apply

200 mW 5

16 hits Apply

Power Gain-Min (Gp) (1)

16.0 dB 16

16 hits Apply

Surface Mount (1)

YES 16

16 hits Apply