Part Details for NE25139U71 by California Eastern Laboratories (CEL)
Overview of NE25139U71 by California Eastern Laboratories (CEL)
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NE25139U71
NE25139U71 CAD Models
NE25139U71 Part Data Attributes
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NE25139U71
California Eastern Laboratories (CEL)
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Datasheet
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NE25139U71
California Eastern Laboratories (CEL)
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CALIFORNIA EASTERN LABORATORIES | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | CASE 39 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 13 V | |
| Drain Current-Max (ID) | 0.04 A | |
| FET Technology | METAL SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.03 pF | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 16 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for NE25139U71
This table gives cross-reference parts and alternative options found for NE25139U71. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NE25139U71, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE25339 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | NEC Electronics America Inc | NE25139U71 vs NE25339 |
| 3SK299-U72 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 | NEC Electronics Group | NE25139U71 vs 3SK299-U72 |
| NE25118-T1 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | NE25139U71 vs NE25118-T1 |
| 3SK299-U74-A | UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, PLASTIC, SO-4 | Renesas Electronics Corporation | NE25139U71 vs 3SK299-U74-A |
| 3SK320 | TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, 2-2K1B, 4 PIN, FET RF Small Signal | Toshiba America Electronic Components | NE25139U71 vs 3SK320 |
| NE25139T2U74 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | NE25139U71 vs NE25139T2U74 |
| 3SK299 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 | NEC Electronics Group | NE25139U71 vs 3SK299 |
| NE25139T1U73 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | NE25139U71 vs NE25139T1U73 |
| NE25139T1U74 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | NE25139U71 vs NE25139T1U74 |
| 3SK299-U73 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 | NEC Electronics Group | NE25139U71 vs 3SK299-U73 |