Part Details for BUK454-400B by NXP Semiconductors
Overview of BUK454-400B by NXP Semiconductors
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 5400/BCA | Rochester Electronics LLC | NAND GATE; QUAD 2-INPUT | |
| 5400/BDA | Rochester Electronics LLC | 5400 - NAND GATE, QUAD 2-INPUT - Dual marked (M38510/00104BDA) |
Part Details for BUK454-400B
BUK454-400B CAD Models
BUK454-400B Part Data Attributes
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BUK454-400B
NXP Semiconductors
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Datasheet
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BUK454-400B
NXP Semiconductors
TRANSISTOR 4.2 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 4.2 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 60 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 75 W | |
| Pulsed Drain Current-Max (IDM) | 17 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 105 ns | |
| Turn-on Time-Max (ton) | 80 ns |
Alternate Parts for BUK454-400B
This table gives cross-reference parts and alternative options found for BUK454-400B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK454-400B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTP3N40 | Power Field-Effect Transistor, 3A I(D), 400V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | BUK454-400B vs MTP3N40 |
| IRF723 | TRANSISTOR,MOSFET,N-CHANNEL,350V V(BR)DSS,2.8A I(D),TO-220AB | National Semiconductor Corporation | BUK454-400B vs IRF723 |
| IRF722 | Power Field-Effect Transistor, 2.5A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | BUK454-400B vs IRF722 |
| IRF723 | 2.8A, 350V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | BUK454-400B vs IRF723 |
| IRF723-010 | Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | BUK454-400B vs IRF723-010 |
| MTP2N25 | Power Field-Effect Transistor, 2A I(D), 250V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | BUK454-400B vs MTP2N25 |
| MTP2N40 | 2A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | BUK454-400B vs MTP2N40 |
| IRF722-001 | Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | BUK454-400B vs IRF722-001 |
| BUZ76 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Thomson Consumer Electronics | BUK454-400B vs BUZ76 |
| MTP4N40E | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Semiconductor Technology Inc | BUK454-400B vs MTP4N40E |