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Transistors / Power Field-Effect Transistors / MTB8N50E
Datasheets
MTB8N50E by:

8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for MTB8N50E by Motorola Mobility LLC

Overview of MTB8N50E by Motorola Mobility LLC

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Part Details for MTB8N50E

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MTB8N50E Part Data Attributes

Parametric Data
MTB8N50E Motorola Mobility LLC
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MTB8N50E Motorola Mobility LLC 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for MTB8N50E

This table gives cross-reference parts and alternative options found for MTB8N50E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB8N50E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTB8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3 onsemi MTB8N50E vs MTB8N50E
Part Number Description Manufacturer Compare
MTB8N50E 8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3 onsemi MTB8N50E vs MTB8N50E
SPB04N60C3 4.5A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, PLASTIC, TO-263, 3 PIN Rochester Electronics LLC MTB8N50E vs SPB04N60C3
IRF840ASPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix MTB8N50E vs IRF840ASPBF
IRF840STRLPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier MTB8N50E vs IRF840STRLPBF
IRF840ASTRL Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier MTB8N50E vs IRF840ASTRL
FS10VS-10 Power Field-Effect Transistor, 10A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Powerex Power Semiconductors MTB8N50E vs FS10VS-10
STB8NA50T4 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN STMicroelectronics MTB8N50E vs STB8NA50T4
2SK1541(S)TR 7A, 500V, 0.9ohm, N-CHANNEL, Si, POWER, MOSFET Renesas Electronics Corporation MTB8N50E vs 2SK1541(S)TR
IRF840STRL Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN International Rectifier MTB8N50E vs IRF840STRL
IRF840ASTRRPBF Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix MTB8N50E vs IRF840ASTRRPBF

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