Part Details for MT4C16258TG-8STR by Micron Technology Inc
Overview of MT4C16258TG-8STR by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SK1838STR-E | Renesas Electronics Corporation | Silicon N Channel MOSFET, LDPAK(S)-(1), /Embossed Tape | |
2SJ528STR-E | Renesas Electronics Corporation | Pch Single Power Mosfet -60V -7A 220Mohm DPAK(S)/To-252 | |
2SK2938STR-E | Renesas Electronics Corporation | Nch Single Power Mosfet 60V 25A 34Mohm LDPAK(S)-(1)/To-263 |
Part Details for MT4C16258TG-8STR
MT4C16258TG-8STR CAD Models
MT4C16258TG-8STR Part Data Attributes
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MT4C16258TG-8STR
Micron Technology Inc
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Datasheet
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MT4C16258TG-8STR
Micron Technology Inc
Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP-44/40
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | TSOP | |
Package Description | TSOP2, | |
Pin Count | 44 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE | |
Access Time-Max | 80 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH; BATTERY BACKUP | |
JESD-30 Code | R-PDSO-G40 | |
JESD-609 Code | e0 | |
Length | 18.41 mm | |
Memory Density | 4194304 bit | |
Memory IC Type | FAST PAGE DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 40 | |
Number of Words | 262144 words | |
Number of Words Code | 256000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 256KX16 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 512 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 5.5 V | |
Supply Voltage-Min (Vsup) | 4.5 V | |
Supply Voltage-Nom (Vsup) | 5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for MT4C16258TG-8STR
This table gives cross-reference parts and alternative options found for MT4C16258TG-8STR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT4C16258TG-8STR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
HY514460BSLTC-80 | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 | SK Hynix Inc | MT4C16258TG-8STR vs HY514460BSLTC-80 |
TC514260BFTL-80 | IC 256K X 16 FAST PAGE DRAM, 80 ns, PDSO40, 0.400 INCH, TSOP2-44/40, Dynamic RAM | Toshiba America Electronic Components | MT4C16258TG-8STR vs TC514260BFTL-80 |
HY514170SLTC-80 | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 | SK Hynix Inc | MT4C16258TG-8STR vs HY514170SLTC-80 |
HY514370RC-80 | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, REVERSE, TSOP2-44/40 | SK Hynix Inc | MT4C16258TG-8STR vs HY514370RC-80 |
MT4C16260TG-8TR | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP-44/40 | Micron Technology Inc | MT4C16258TG-8STR vs MT4C16260TG-8TR |
GM71C4260AT-80 | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, | LG Semicon Co Ltd | MT4C16258TG-8STR vs GM71C4260AT-80 |
M5M44270ART-8ST | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 | Mitsubishi Electric | MT4C16258TG-8STR vs M5M44270ART-8ST |
UPD42S4260G5-80-7JF | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 | NEC Electronics America Inc | MT4C16258TG-8STR vs UPD42S4260G5-80-7JF |
M5M44260ART-8S | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 | Mitsubishi Electric | MT4C16258TG-8STR vs M5M44260ART-8S |
KM416C256AT-8 | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40, PLASTIC, TSOP2-44/40 | Samsung Semiconductor | MT4C16258TG-8STR vs KM416C256AT-8 |