Part Details for MII200-12A4 by Littelfuse Inc
Overview of MII200-12A4 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for MII200-12A4
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH5569
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Newark | Igbt Module - Phaseleg Y3-Dcb/Box |Littelfuse MII200-12A4 Min Qty: 2 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for MII200-12A4
MII200-12A4 CAD Models
MII200-12A4 Part Data Attributes
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MII200-12A4
Littelfuse Inc
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Datasheet
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MII200-12A4
Littelfuse Inc
Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 270 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1250 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 700 ns | |
| Turn-on Time-Nom (ton) | 150 ns | |
| VCEsat-Max | 3 V |
Alternate Parts for MII200-12A4
This table gives cross-reference parts and alternative options found for MII200-12A4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MII200-12A4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APTGT200A120D3G | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | MII200-12A4 vs APTGT200A120D3G |
| FF200R12KS4 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MII200-12A4 vs FF200R12KS4 |
| BSM150GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MII200-12A4 vs BSM150GB120DLCHOSA1 |
| FF200R12KT3EHOSA1 | Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MII200-12A4 vs FF200R12KT3EHOSA1 |
| CM300DU-24H | Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, | Mitsubishi Electric | MII200-12A4 vs CM300DU-24H |
| FF200R12KT3 | Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MII200-12A4 vs FF200R12KT3 |
| BSM100GB120DLCHOSA1 | Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MII200-12A4 vs BSM100GB120DLCHOSA1 |
| FF200R12KS4HOSA1 | Insulated Gate Bipolar Transistor, 275A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MII200-12A4 vs FF200R12KS4HOSA1 |
| FF200R12KE4HOSA1 | Insulated Gate Bipolar Transistor, 240A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | MII200-12A4 vs FF200R12KE4HOSA1 |
| MII300-12A4 | Insulated Gate Bipolar Transistor, 330A I(C), 1200V V(BR)CES, N-Channel, MODULE-7 | Littelfuse Inc | MII200-12A4 vs MII300-12A4 |