Datasheets
M470T2864DZ3-LD5 by:

Synchronous DRAM Module, 128MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200

Part Details for M470T2864DZ3-LD5 by Samsung Semiconductor

Overview of M470T2864DZ3-LD5 by Samsung Semiconductor

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Applications Computing and Data Storage

Part Details for M470T2864DZ3-LD5

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M470T2864DZ3-LD5 Part Data Attributes

M470T2864DZ3-LD5 Samsung Semiconductor
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M470T2864DZ3-LD5 Samsung Semiconductor Synchronous DRAM Module, 128MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code MODULE
Package Description DIMM, DIMM200,24
Pin Count 200
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode DUAL BANK PAGE BURST
Access Time-Max 0.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 267 MHz
I/O Type COMMON
JESD-30 Code R-XDMA-N200
Memory Density 8589934592 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 200
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min
Organization 128MX64
Output Characteristics 3-STATE
Package Body Material UNSPECIFIED
Package Code DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Refresh Cycles 8192
Self Refresh YES
Standby Current-Max 0.064 A
Supply Current-Max 1.16 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount NO
Technology CMOS
Temperature Grade OTHER
Terminal Form NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for M470T2864DZ3-LD5

This table gives cross-reference parts and alternative options found for M470T2864DZ3-LD5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M470T2864DZ3-LD5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NT1GT64U8HA0FM-5A DDR DRAM Module, 128MX64, 0.6ns, CMOS, SODIMM-200 Nanya Technology Corporation M470T2864DZ3-LD5 vs NT1GT64U8HA0FM-5A
MT16HTF12864HY-40EXX DDR DRAM Module, 128MX64, 0.6ns, CMOS, LEAD FREE, MO-224, SODIMM-200 Micron Technology Inc M470T2864DZ3-LD5 vs MT16HTF12864HY-40EXX
WV3EG265M64EFSU335D4-S DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 Microsemi Corporation M470T2864DZ3-LD5 vs WV3EG265M64EFSU335D4-S
HYMD512M646BF8-J DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 SK Hynix Inc M470T2864DZ3-LD5 vs HYMD512M646BF8-J
WV3EG265M64EFSU262D4-SG DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, SODIMM-200 Microsemi Corporation M470T2864DZ3-LD5 vs WV3EG265M64EFSU262D4-SG
NT1GD64S8HB0GM-6K DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 Nanya Technology Corporation M470T2864DZ3-LD5 vs NT1GD64S8HB0GM-6K
W3EG64128S265BD4 DDR DRAM Module, 128MX64, CMOS, SODIMM-200 Microsemi Corporation M470T2864DZ3-LD5 vs W3EG64128S265BD4
M470T2864DZ3-LCC Synchronous DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 Samsung Semiconductor M470T2864DZ3-LD5 vs M470T2864DZ3-LCC
MT8HTF12864HY-40EXX DDR DRAM Module, 128MX64, 0.6ns, CMOS, LEAD FREE, SODIMM-200 Micron Technology Inc M470T2864DZ3-LD5 vs MT8HTF12864HY-40EXX
WV3EG265M64EFSU265D4-SG DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, SODIMM-200 Microsemi Corporation M470T2864DZ3-LD5 vs WV3EG265M64EFSU265D4-SG

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