Part Details for M470T2864DZ3-LD5 by Samsung Semiconductor
Overview of M470T2864DZ3-LD5 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Computing and Data Storage
Part Details for M470T2864DZ3-LD5
M470T2864DZ3-LD5 CAD Models
M470T2864DZ3-LD5 Part Data Attributes
|
M470T2864DZ3-LD5
Samsung Semiconductor
Buy Now
Datasheet
|
Compare Parts:
M470T2864DZ3-LD5
Samsung Semiconductor
Synchronous DRAM Module, 128MX64, 0.5ns, CMOS, ROHS COMPLIANT, SODIMM-200
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | MODULE | |
Package Description | DIMM, DIMM200,24 | |
Pin Count | 200 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Mode | DUAL BANK PAGE BURST | |
Access Time-Max | 0.5 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 267 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N200 | |
Memory Density | 8589934592 bit | |
Memory IC Type | SYNCHRONOUS DRAM MODULE | |
Memory Width | 64 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 200 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 95 °C | |
Operating Temperature-Min | ||
Organization | 128MX64 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM200,24 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Self Refresh | YES | |
Standby Current-Max | 0.064 A | |
Supply Current-Max | 1.16 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | NO LEAD | |
Terminal Pitch | 0.6 mm | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for M470T2864DZ3-LD5
This table gives cross-reference parts and alternative options found for M470T2864DZ3-LD5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M470T2864DZ3-LD5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NT1GT64U8HA0FM-5A | DDR DRAM Module, 128MX64, 0.6ns, CMOS, SODIMM-200 | Nanya Technology Corporation | M470T2864DZ3-LD5 vs NT1GT64U8HA0FM-5A |
MT16HTF12864HY-40EXX | DDR DRAM Module, 128MX64, 0.6ns, CMOS, LEAD FREE, MO-224, SODIMM-200 | Micron Technology Inc | M470T2864DZ3-LD5 vs MT16HTF12864HY-40EXX |
WV3EG265M64EFSU335D4-S | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | Microsemi Corporation | M470T2864DZ3-LD5 vs WV3EG265M64EFSU335D4-S |
HYMD512M646BF8-J | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | M470T2864DZ3-LD5 vs HYMD512M646BF8-J |
WV3EG265M64EFSU262D4-SG | DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | M470T2864DZ3-LD5 vs WV3EG265M64EFSU262D4-SG |
NT1GD64S8HB0GM-6K | DDR DRAM Module, 128MX64, 0.7ns, CMOS, SODIMM-200 | Nanya Technology Corporation | M470T2864DZ3-LD5 vs NT1GD64S8HB0GM-6K |
W3EG64128S265BD4 | DDR DRAM Module, 128MX64, CMOS, SODIMM-200 | Microsemi Corporation | M470T2864DZ3-LD5 vs W3EG64128S265BD4 |
M470T2864DZ3-LCC | Synchronous DRAM Module, 128MX64, 0.6ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Samsung Semiconductor | M470T2864DZ3-LD5 vs M470T2864DZ3-LCC |
MT8HTF12864HY-40EXX | DDR DRAM Module, 128MX64, 0.6ns, CMOS, LEAD FREE, SODIMM-200 | Micron Technology Inc | M470T2864DZ3-LD5 vs MT8HTF12864HY-40EXX |
WV3EG265M64EFSU265D4-SG | DDR DRAM Module, 128MX64, 0.75ns, CMOS, ROHS COMPLIANT, SODIMM-200 | Microsemi Corporation | M470T2864DZ3-LD5 vs WV3EG265M64EFSU265D4-SG |