Memory
M464S0924BT1-L1H
Samsung Semiconductor
Description: Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144

Overview of M464S0924BT1-L1H by Samsung Semiconductor

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Where used in Applications: Education and Research Consumer Electronics Computing and Data Storage

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Part Data Attributes for M464S0924BT1-L1H by Samsung Semiconductor

M464S0924BT1-L1H
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
MODULE
Package Description
DIMM, DIMM144,32
Pin Count
144
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
100 MHz
I/O Type
COMMON
JESD-30 Code
R-XDMA-N144
Memory Density
536870912 bit
Memory IC Type
SYNCHRONOUS DRAM MODULE
Memory Width
64
Moisture Sensitivity Level
1
Number of Functions
1
Number of Ports
1
Number of Terminals
144
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8MX64
Output Characteristics
3-STATE
Package Body Material
UNSPECIFIED
Package Code
DIMM
Package Equivalence Code
DIMM144,32
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
25.4 mm
Self Refresh
YES
Standby Current-Max
0.004 A
Supply Current-Max
0.84 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
NO LEAD
Terminal Pitch
0.8 mm
Terminal Position
DUAL
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  1. M464S0924BT1-L1H
    Samsung Semiconductor
    Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144
    VS

Alternate Parts for M464S0924BT1-L1H

This table gives cross-reference parts and alternative options found for M464S0924BT1-L1H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of M464S0924BT1-L1H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
M463S0924BT0-L1H Synchronous DRAM Module, 8MX64, 6ns, CMOS, MICRO, DIMM-144 Samsung Semiconductor M464S0924BT1-L1H vs M463S0924BT0-L1H
M464S0924CT1-L1H Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-144 Samsung Semiconductor M464S0924BT1-L1H vs M464S0924CT1-L1H
HYM71V8M655HCLT6-P Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc M464S0924BT1-L1H vs HYM71V8M655HCLT6-P
MH8S64AQFC-8L Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-144 Mitsubishi Electric M464S0924BT1-L1H vs MH8S64AQFC-8L
KMM464S924T1-FL Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 Samsung Semiconductor M464S0924BT1-L1H vs KMM464S924T1-FL
M464S0924MT1-L1L Synchronous DRAM Module, 8MX64, 6ns, CMOS, 1 INCH HEIGHT, SODIMM-144 Samsung Semiconductor M464S0924BT1-L1H vs M464S0924MT1-L1L
M464S0924CT1-L1L Synchronous DRAM Module, 8MX64, 6ns, CMOS, DIMM-144 Samsung Semiconductor M464S0924BT1-L1H vs M464S0924CT1-L1L
M463S0924BT0-L1L Synchronous DRAM Module, 8MX64, 7ns, CMOS, MICRO, DIMM-144 Samsung Semiconductor M464S0924BT1-L1H vs M463S0924BT0-L1L
M464S0924MT1-L1H Synchronous DRAM Module, 8MX64, 6ns, CMOS, 1 INCH HEIGHT, SODIMM-144 Samsung Semiconductor M464S0924BT1-L1H vs M464S0924MT1-L1H
HYM71V8M655HCLT6-S Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc M464S0924BT1-L1H vs HYM71V8M655HCLT6-S
Part Number Description Manufacturer Compare
M464S0824CT1-L75 Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, DIMM-144 Samsung Semiconductor M464S0924BT1-L1H vs M464S0824CT1-L75
KMM464S924T1-FL Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 Samsung Semiconductor M464S0924BT1-L1H vs KMM464S924T1-FL
VP864648041BTGA-10 Synchronous DRAM Module, 8MX64, 7ns, CMOS, SODIMM-144 Vanguard International Semiconductor Corporation M464S0924BT1-L1H vs VP864648041BTGA-10
MT8LDT864HG-6S Fast Page DRAM Module, 8MX64, 60ns, CMOS Micron Technology Inc M464S0924BT1-L1H vs MT8LDT864HG-6S
STI648100G1-60VGO Fast Page DRAM Module, 8MX64, 60ns, CMOS, DIMM-144 Simple Tech Inc M464S0924BT1-L1H vs STI648100G1-60VGO
VP864648041BTG-8L Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 Vanguard International Semiconductor Corporation M464S0924BT1-L1H vs VP864648041BTG-8L
W3DG648V75D1 Synchronous DRAM Module, 8MX64, CMOS, SODIMM-144 Microsemi Corporation M464S0924BT1-L1H vs W3DG648V75D1
MT4LSDT864LWY-13EXX Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, MICRO, DIMM-144 Micron Technology Inc M464S0924BT1-L1H vs MT4LSDT864LWY-13EXX
HYM71V8M655BLT6-S Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 SK Hynix Inc M464S0924BT1-L1H vs HYM71V8M655BLT6-S
HB56SW864DBK-7LS EDO DRAM Module, 8MX64, 70ns, CMOS, SODIMM-144 Hitachi Ltd M464S0924BT1-L1H vs HB56SW864DBK-7LS

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