Part Details for K7R643682M-FC250 by Samsung Semiconductor
Overview of K7R643682M-FC250 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K7R643682M-FC250
K7R643682M-FC250 CAD Models
K7R643682M-FC250 Part Data Attributes:
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K7R643682M-FC250
Samsung Semiconductor
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Datasheet
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K7R643682M-FC250
Samsung Semiconductor
QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | BGA | |
| Package Description | LBGA, BGA165,11X15,40 | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | SEPARATE | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e0 | |
| Length | 17 mm | |
| Memory Density | 75497472 bit | |
| Memory IC Type | QDR SRAM | |
| Memory Width | 36 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX36 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Voltage-Min | 1.7 V | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 15 mm |
Alternate Parts for K7R643682M-FC250
This table gives cross-reference parts and alternative options found for K7R643682M-FC250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7R643682M-FC250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CY7C1514JV18-250BZXC | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7R643682M-FC250 vs CY7C1514JV18-250BZXC |
| K7R643682M-EC250 | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | Samsung Semiconductor | K7R643682M-FC250 vs K7R643682M-EC250 |
| GS8672Q36BGE-250T | Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | K7R643682M-FC250 vs GS8672Q36BGE-250T |
| IS61QDB22M36-250M3 | DDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, LFBGA-165 | Integrated Silicon Solution Inc | K7R643682M-FC250 vs IS61QDB22M36-250M3 |
| CY7C1514KV18-250BZXC | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, FBGA-165 | Cypress Semiconductor | K7R643682M-FC250 vs CY7C1514KV18-250BZXC |
| IS61QDB22M36A-250M3 | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | K7R643682M-FC250 vs IS61QDB22M36A-250M3 |
| CY7C1514AV18-250BZXC | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | K7R643682M-FC250 vs CY7C1514AV18-250BZXC |
| IS61QDB22M36A-250B3 | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165 | Integrated Silicon Solution Inc | K7R643682M-FC250 vs IS61QDB22M36A-250B3 |
| CY7C1514AV18-250BZC | QDR SRAM, 2MX36, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | K7R643682M-FC250 vs CY7C1514AV18-250BZC |
| CY7C1514KV18-250BZXC | QDR II SRAM, 2MX36, 0.45ns, CMOS, PBGA165, | Infineon Technologies AG | K7R643682M-FC250 vs CY7C1514KV18-250BZXC |