Datasheets
K7I641882M-EC30 by: Samsung Semiconductor

Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165

Part Details for K7I641882M-EC30 by Samsung Semiconductor

Overview of K7I641882M-EC30 by Samsung Semiconductor

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PHEC30P-S211LF Amphenol Communications Solutions PHEN/PHEC Board-to-Board Connector, Straight Plug, 1.27mm (0.05inch).

Part Details for K7I641882M-EC30

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K7I641882M-EC30 Part Data Attributes

K7I641882M-EC30 Samsung Semiconductor
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K7I641882M-EC30 Samsung Semiconductor Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description BGA, BGA165,11X15,40
Reach Compliance Code unknown
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Clock Frequency-Max (fCLK) 300 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e3
Memory Density 75497472 bit
Memory IC Type STANDARD SRAM
Memory Width 18
Moisture Sensitivity Level 1
Number of Terminals 165
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code BGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY
Parallel/Serial PARALLEL
Qualification Status Not Qualified
Standby Voltage-Min 1.7 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM

Alternate Parts for K7I641882M-EC30

This table gives cross-reference parts and alternative options found for K7I641882M-EC30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K7I641882M-EC30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1518V18-300BZXC DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I641882M-EC30 vs CY7C1518V18-300BZXC
GS8672T18BGE-300 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology K7I641882M-EC30 vs GS8672T18BGE-300
CY7C1518JV18-300BZXC DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I641882M-EC30 vs CY7C1518JV18-300BZXC
GS8662T18BGD-300T DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7I641882M-EC30 vs GS8662T18BGD-300T
UPD44644182AF5-E33-FQ1-A 4MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165 Renesas Electronics Corporation K7I641882M-EC30 vs UPD44644182AF5-E33-FQ1-A
GS8662T18BD-300T DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7I641882M-EC30 vs GS8662T18BD-300T
GS8672T18BGE-300T DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology K7I641882M-EC30 vs GS8672T18BGE-300T
CY7C1518AV18-300BZXC DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I641882M-EC30 vs CY7C1518AV18-300BZXC
K7I641882M-EC300 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor K7I641882M-EC30 vs K7I641882M-EC300
GS8672T18BE-300 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology K7I641882M-EC30 vs GS8672T18BE-300
Part Number Description Manufacturer Compare
CY7C1518AV18-300BZXC DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I641882M-EC30 vs CY7C1518AV18-300BZXC
CY7C1518JV18-300BZXC DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I641882M-EC30 vs CY7C1518JV18-300BZXC
GS8672T18BE-300 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 GSI Technology K7I641882M-EC30 vs GS8672T18BE-300
K7I641882M-FC300 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor K7I641882M-EC30 vs K7I641882M-FC300
GS8662T18BD-300T DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 GSI Technology K7I641882M-EC30 vs GS8662T18BD-300T
CY7C1518V18-300BZXC DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I641882M-EC30 vs CY7C1518V18-300BZXC
CY7C1518V18-300BZC DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor K7I641882M-EC30 vs CY7C1518V18-300BZC
K7I641882M-EC300 DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 Samsung Semiconductor K7I641882M-EC30 vs K7I641882M-EC300
CY7C1518KV18-300BZXC DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor K7I641882M-EC30 vs CY7C1518KV18-300BZXC
GS8662T18BGD-300T DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 GSI Technology K7I641882M-EC30 vs GS8662T18BGD-300T

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