Part Details for GS8662T18BGD-300T by GSI Technology
Overview of GS8662T18BGD-300T by GSI Technology
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 2SA1330(0)-T1B-A | Renesas Electronics Corporation | Small Signal Bipolar Transistors | |
| 2SA1330(0)-T1B-AT | Renesas Electronics Corporation | Small Signal Bipolar Transistors | |
| 2SB1300-T-AZ | Renesas Electronics Corporation | Bipolar Power Transistors |
Part Details for GS8662T18BGD-300T
GS8662T18BGD-300T CAD Models
GS8662T18BGD-300T Part Data Attributes
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GS8662T18BGD-300T
GSI Technology
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Datasheet
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GS8662T18BGD-300T
GSI Technology
DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GSI TECHNOLOGY | |
| Part Package Code | BGA | |
| Package Description | LBGA, BGA165,11X15,40 | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE, LATE WRITE | |
| Clock Frequency-Max (fCLK) | 300 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 15 mm | |
| Memory Density | 75497472 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.495 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 13 mm |
Alternate Parts for GS8662T18BGD-300T
This table gives cross-reference parts and alternative options found for GS8662T18BGD-300T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of GS8662T18BGD-300T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CY7C1518V18-300BZXC | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | GS8662T18BGD-300T vs CY7C1518V18-300BZXC |
| GS8672T18BGE-300 | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | GSI Technology | GS8662T18BGD-300T vs GS8672T18BGE-300 |
| CY7C1518JV18-300BZXC | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | GS8662T18BGD-300T vs CY7C1518JV18-300BZXC |
| UPD44644182AF5-E33-FQ1-A | 4MX18 DDR SRAM, 0.45ns, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165 | Renesas Electronics Corporation | GS8662T18BGD-300T vs UPD44644182AF5-E33-FQ1-A |
| K7I641882M-EC30 | Standard SRAM, 4MX18, 0.45ns, CMOS, PBGA165 | Samsung Semiconductor | GS8662T18BGD-300T vs K7I641882M-EC30 |
| GS8662T18BD-300T | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | GS8662T18BGD-300T vs GS8662T18BD-300T |
| GS8672T18BGE-300T | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | GSI Technology | GS8662T18BGD-300T vs GS8672T18BGE-300T |
| CY7C1518AV18-300BZXC | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | GS8662T18BGD-300T vs CY7C1518AV18-300BZXC |
| K7I641882M-EC300 | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | Samsung Semiconductor | GS8662T18BGD-300T vs K7I641882M-EC300 |
| GS8672T18BE-300 | DDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | GSI Technology | GS8662T18BGD-300T vs GS8672T18BE-300 |