Part Details for K4S643232H-TC600 by Samsung Semiconductor
Overview of K4S643232H-TC600 by Samsung Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Industrial Automation
Computing and Data Storage
Renewable Energy
Robotics and Drones
Price & Stock for K4S643232H-TC600
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 366 |
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RFQ |
Part Details for K4S643232H-TC600
K4S643232H-TC600 CAD Models
K4S643232H-TC600 Part Data Attributes
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K4S643232H-TC600
Samsung Semiconductor
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Datasheet
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K4S643232H-TC600
Samsung Semiconductor
Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, TSOP2-86
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSSOP, | |
| Pin Count | 86 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G86 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 86 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX32 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Peak Reflow Temperature (Cel) | 240 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Width | 10.16 mm |
Alternate Parts for K4S643232H-TC600
This table gives cross-reference parts and alternative options found for K4S643232H-TC600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643232H-TC600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT48LC2M32B2P-6AIT:J | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-86 | Micron Technology Inc | K4S643232H-TC600 vs MT48LC2M32B2P-6AIT:J |
| K4S643232H-TL600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, TSOP2-86 | Samsung Semiconductor | K4S643232H-TC600 vs K4S643232H-TL600 |
| MT48LC2M32B2TG-6AIT:G | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, TSOP2-86 | Micron Technology Inc | K4S643232H-TC600 vs MT48LC2M32B2TG-6AIT:G |
| MT48LC2M32B2P-6:GIT | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-86 | Micron Technology Inc | K4S643232H-TC600 vs MT48LC2M32B2P-6:GIT |
| M12L64322A-6TIG | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH LEAD FREE, TSOP2-86 | Elite Semiconductor Memory Technology Inc | K4S643232H-TC600 vs M12L64322A-6TIG |
| MT48LC2M32B2P-6AAT:J | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, TSOP2-86 | Micron Technology Inc | K4S643232H-TC600 vs MT48LC2M32B2P-6AAT:J |
| AS4SD2M32DGX-6XT | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, PLASTIC, TSOP2-86 | Micross Components | K4S643232H-TC600 vs AS4SD2M32DGX-6XT |
| MT48LC2M32B2TG-6AIT:J | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 | Micron Technology Inc | K4S643232H-TC600 vs MT48LC2M32B2TG-6AIT:J |
| K4S643232F-TL600 | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 | Samsung Semiconductor | K4S643232H-TC600 vs K4S643232F-TL600 |
| MT48LC2M32B2P-6AAT:G | Synchronous DRAM, | Micron Technology Inc | K4S643232H-TC600 vs MT48LC2M32B2P-6AAT:G |