Parametric results for: K4S643232H-TC600 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (1)

FOUR BANK PAGE BURST 1

1 hit Apply

Access Time-Max (1)

5.5 ns 1

1 hit Apply

AUTO/SELF REFRESH 1

1 hit Apply

R-PDSO-G86 1

1 hit Apply

22.22 mm 1

1 hit Apply

Manufacturer (1)

Samsung Semiconductor 1

1 hit Apply

Memory Density (1)

67.1089 Mbit 1

1 hit Apply

SYNCHRONOUS DRAM 1

1 hit Apply

Memory Width (1)

32 1

1 hit Apply

1.0 1

1 hit Apply

1 1

1 hit Apply

86 1

1 hit Apply

2.0972 M 1

1 hit Apply

2000000.0 1

1 hit Apply

SYNCHRONOUS 1

1 hit Apply

70.0 °C 1

1 hit Apply

0.0 °C 1

1 hit Apply

Organization (1)

2MX32 1

1 hit Apply

PLASTIC/EPOXY 1

1 hit Apply

TSSOP 1

1 hit Apply

RECTANGULAR 1

1 hit Apply

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH 1

1 hit Apply

Supply Voltage-Nom (Vsup) (1)

3.3 V 1

1 hit Apply