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Memory DRAMs K4S643232E-TL500

Memory
K4S643232E-TL500
Samsung Semiconductor
Description: Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86

Overview of K4S643232E-TL500 by Samsung Semiconductor

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Where used in Applications: Consumer Electronics Internet of Things (IoT) Industrial Automation Computing and Data Storage Renewable Energy Robotics and Drones

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Part Data Attributes for K4S643232E-TL500 by Samsung Semiconductor
Parametric Data

K4S643232E-TL500
Samsung Semiconductor
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
86
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
4.5 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G86
Length
22.22 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
86
Number of Words
2097152 words
Number of Words Code
2000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
2MX32
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel)
240
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.5 mm
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Width
10.16 mm
Want to compare parts?
  1. K4S643232E-TL500
    Samsung Semiconductor
    Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86
    VS

Alternate Parts for K4S643232E-TL500

This table gives cross-reference parts and alternative options found for K4S643232E-TL500. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S643232E-TL500, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4S643232E-TN500 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232E-TL500 vs K4S643232E-TN500
IS42S32200A-5TI Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Integrated Silicon Solution Inc K4S643232E-TL500 vs IS42S32200A-5TI
W986432EH-5 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Winbond Electronics Corp K4S643232E-TL500 vs W986432EH-5
HY57V643220CLT-5I Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, TSOP2-86 SK Hynix Inc K4S643232E-TL500 vs HY57V643220CLT-5I
W986432DH-5 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 INCH, 0.50 MM PITCH, TSOP2-86 Winbond Electronics Corp K4S643232E-TL500 vs W986432DH-5
K4S643232E-TC500 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232E-TL500 vs K4S643232E-TC500
IS42S32200A-5T Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 INCH, TSOP2-86 Integrated Silicon Solution Inc K4S643232E-TL500 vs IS42S32200A-5T
K4S643232F-TC500 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232E-TL500 vs K4S643232F-TC500
M12L64322A-5TG Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 Elite Semiconductor Memory Technology Inc K4S643232E-TL500 vs M12L64322A-5TG
K4S643232H-TL500 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, TSOP2-86 Samsung Semiconductor K4S643232E-TL500 vs K4S643232H-TL500
Part Number Description Manufacturer Compare
IS42S32200L-6TLI Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, LEAD FREE, TSOPII-86 Integrated Silicon Solution Inc K4S643232E-TL500 vs IS42S32200L-6TLI
MB81F643242B-70LFN 2MX32 SYNCHRONOUS DRAM, 6ns, PDSO86, 0.400 INCH, PLASTIC, TSOP2-86 FUJITSU Semiconductor Limited K4S643232E-TL500 vs MB81F643242B-70LFN
MD56V62320K-75TAZ03 Synchronous DRAM, 2MX32, 5.4ns, CMOS, PDSO86, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC, TSOP2-86 OKI Electric Industry Co Ltd K4S643232E-TL500 vs MD56V62320K-75TAZ03
K4S643232C-TC80 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232E-TL500 vs K4S643232C-TC80
K4S643232F-TL50 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232E-TL500 vs K4S643232F-TL50
K4S643232E-TN50 Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 Samsung Semiconductor K4S643232E-TL500 vs K4S643232E-TN50
MT48LC2M32B2TG-55IT:G Synchronous DRAM Micron Technology Inc K4S643232E-TL500 vs MT48LC2M32B2TG-55IT:G
TC59S6432DFT-80 IC 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86, 0.400 ICNH, 0.50 MM PITCH, PLASTIC, TSOP2-86, Dynamic RAM Toshiba America Electronic Components K4S643232E-TL500 vs TC59S6432DFT-80
HY57V643220DLT-55 Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc K4S643232E-TL500 vs HY57V643220DLT-55
VG36643241BT-7 Synchronous DRAM, 2MX32, 6ns, CMOS, PDSO86, 0.400 INCH, PLASTIC, TSOP-86 Vanguard International Semiconductor Corporation K4S643232E-TL500 vs VG36643241BT-7

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