Part Details for K4S641632N-LL600 by Samsung Semiconductor
Overview of K4S641632N-LL600 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Part Details for K4S641632N-LL600
K4S641632N-LL600 CAD Models
K4S641632N-LL600 Part Data Attributes
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K4S641632N-LL600
Samsung Semiconductor
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Datasheet
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K4S641632N-LL600
Samsung Semiconductor
Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TSOP2 | |
| Package Description | TSOP2, TSOP54,.46,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PDSO-G54 | |
| Length | 22.22 mm | |
| Memory Density | 67108864 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 4MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSOP54,.46,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.002 A | |
| Supply Current-Max | 0.12 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for K4S641632N-LL600
This table gives cross-reference parts and alternative options found for K4S641632N-LL600. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4S641632N-LL600, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IS42S16400E-6TLI | 4MX16 SYNCHRONOUS DRAM, 5ns, PDSO54, 0.400 INCH, LEAD FREE, TSPO2-54 | ABLIC Inc. | K4S641632N-LL600 vs IS42S16400E-6TLI |
| K4S641632H-TC600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, TSOP2-54 | Samsung Semiconductor | K4S641632N-LL600 vs K4S641632H-TC600 |
| VG36641641DT-5L | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Vanguard International Semiconductor Corporation | K4S641632N-LL600 vs VG36641641DT-5L |
| HY57V641621TC-7 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S641632N-LL600 vs HY57V641621TC-7 |
| IS42S16400E-6TL | 4MX16 SYNCHRONOUS DRAM, 5ns, PDSO54, 0.400 INCH, LEAD FREE, TSPO2-54 | ABLIC Inc. | K4S641632N-LL600 vs IS42S16400E-6TL |
| K4S641632H-UL600 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, LEAD FREE, TSOP2-54 | Samsung Semiconductor | K4S641632N-LL600 vs K4S641632H-UL600 |
| HY57V651621TC-7 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 | SK Hynix Inc | K4S641632N-LL600 vs HY57V651621TC-7 |
| VG36641641DTL-6 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Vanguard International Semiconductor Corporation | K4S641632N-LL600 vs VG36641641DTL-6 |
| W9864G6GH-6 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 | Winbond Electronics Corp | K4S641632N-LL600 vs W9864G6GH-6 |
| V54C365164VDT5 | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | K4S641632N-LL600 vs V54C365164VDT5 |