K4H511638D-ULA2T
Samsung Semiconductor
Description: Cache DRAM Module, 32MX16, 0.75ns, CMOS, PDSO66

Overview of K4H511638D-ULA2T by Samsung Semiconductor

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Where used in Applications: Education and Research Consumer Electronics Computing and Data Storage

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Part Data Attributes for K4H511638D-ULA2T by Samsung Semiconductor

K4H511638D-ULA2T
Samsung Semiconductor
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Package Description
TSSOP, TSSOP66,.46
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Time-Max
0.75 ns
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PDSO-G66
JESD-609 Code
e3
Memory Density
536870912 bit
Memory IC Type
CACHE DRAM MODULE
Memory Width
16
Moisture Sensitivity Level
1
Number of Terminals
66
Number of Words
33554432 words
Number of Words Code
32000000
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSSOP
Package Equivalence Code
TSSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Sequential Burst Length
2,4,8
Standby Current-Max
0.005 A
Supply Current-Max
0.345 mA
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Pitch
0.635 mm
Terminal Position
DUAL
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  1. K4H511638D-ULA2T
    Samsung Semiconductor
    Cache DRAM Module, 32MX16, 0.75ns, CMOS, PDSO66
    VS

Alternate Parts for K4H511638D-ULA2T

This table gives cross-reference parts and alternative options found for K4H511638D-ULA2T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638D-ULA2T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4H511638D-UCA2 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638D-ULA2T vs K4H511638D-UCA2
MT46V32M16P-75L:F DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-ULA2T vs MT46V32M16P-75L:F
K4H511638C-ULB00 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638D-ULA2T vs K4H511638C-ULB00
MT46V32M16TG-75:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-ULA2T vs MT46V32M16TG-75:C
MT46V32M16TG-75 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-ULA2T vs MT46V32M16TG-75
MT46V32M16TG-75ZL:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-ULA2T vs MT46V32M16TG-75ZL:C
K4H511638B-ULB0 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638D-ULA2T vs K4H511638B-ULB0
MT46V32M16P-75Z:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-ULA2T vs MT46V32M16P-75Z:C
MT46V32M16TG-75L:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-ULA2T vs MT46V32M16TG-75L:C
MT46V32M16P-75EL:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-ULA2T vs MT46V32M16P-75EL:C
Part Number Description Manufacturer Compare
V58C2512164SDUI75E DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638D-ULA2T vs V58C2512164SDUI75E
K4H510438F-LLB3 DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Electro-Mechanics K4H511638D-ULA2T vs K4H510438F-LLB3
V58C2512164SDLI33 DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638D-ULA2T vs V58C2512164SDLI33
DPDD32MX16WSCY5-DP-XX0820 DDR DRAM Module, 32MX16, CMOS, LEADED STACK, TSOP-66 B&B Electronics Manufacturing Company K4H511638D-ULA2T vs DPDD32MX16WSCY5-DP-XX0820
V58C2512164SDLI8E DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638D-ULA2T vs V58C2512164SDLI8E
V58C2512164SDLI6I DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638D-ULA2T vs V58C2512164SDLI6I
V58C2512164SAI-4I DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638D-ULA2T vs V58C2512164SAI-4I
V58C2512164SDLI33E DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638D-ULA2T vs V58C2512164SDLI33E
K4H511638B-TCCC DDR DRAM, 32MX16, 0.65ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H511638D-ULA2T vs K4H511638B-TCCC
V58C2512164SDUI36E DDR DRAM, 32MX16, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc K4H511638D-ULA2T vs V58C2512164SDUI36E

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