Datasheets
K4H511638D-UCA2 by: Samsung Semiconductor

DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66

Part Details for K4H511638D-UCA2 by Samsung Semiconductor

Overview of K4H511638D-UCA2 by Samsung Semiconductor

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Applications Education and Research Consumer Electronics Computing and Data Storage

Part Details for K4H511638D-UCA2

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K4H511638D-UCA2 Part Data Attributes

K4H511638D-UCA2 Samsung Semiconductor
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K4H511638D-UCA2 Samsung Semiconductor DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description TSSOP, TSSOP66,.46
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Time-Max 0.75 ns
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e3
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Moisture Sensitivity Level 1
Number of Terminals 66
Number of Words 33554432 words
Number of Words Code 32000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.345 mA
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Pitch 0.635 mm
Terminal Position DUAL

Alternate Parts for K4H511638D-UCA2

This table gives cross-reference parts and alternative options found for K4H511638D-UCA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638D-UCA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT46V32M16TG-75:F DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-UCA2 vs MT46V32M16TG-75:F
MT46V32M16TG-75E:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-UCA2 vs MT46V32M16TG-75E:C
K4H511638D-UCB00 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638D-UCA2 vs K4H511638D-UCB00
K4H511638B-ULA2 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638D-UCA2 vs K4H511638B-ULA2
K4H511638B-ULB0 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638D-UCA2 vs K4H511638B-ULB0
K4H511638D-ULA2 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638D-UCA2 vs K4H511638D-ULA2
K4H511638B-TCB0 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H511638D-UCA2 vs K4H511638B-TCB0
K4H511638D-ULA2T Cache DRAM Module, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638D-UCA2 vs K4H511638D-ULA2T
MT46V32M16P-75EL:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-UCA2 vs MT46V32M16P-75EL:C
K4H511638B-UCB0 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638D-UCA2 vs K4H511638B-UCB0
Part Number Description Manufacturer Compare
IS43R16320B-5TL DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66 Integrated Silicon Solution Inc K4H511638D-UCA2 vs IS43R16320B-5TL
HYI25DC512160DE-5A DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG K4H511638D-UCA2 vs HYI25DC512160DE-5A
K4H511638B-TCA2 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H511638D-UCA2 vs K4H511638B-TCA2
MT46V32M16TG-75ZL DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-UCA2 vs MT46V32M16TG-75ZL
HYB25D512160AEL-7 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Infineon Technologies AG K4H511638D-UCA2 vs HYB25D512160AEL-7
MT46V32M16P-5BIT:C DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-UCA2 vs MT46V32M16P-5BIT:C
IS43R16320D-6BI DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-60 Integrated Silicon Solution Inc K4H511638D-UCA2 vs IS43R16320D-6BI
HYB25D512160CEL-6 DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG K4H511638D-UCA2 vs HYB25D512160CEL-6
HY5DU121622BLT-J DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc K4H511638D-UCA2 vs HY5DU121622BLT-J
MT46V32M16P-75ZLIT DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638D-UCA2 vs MT46V32M16P-75ZLIT

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