Memory
K4H511638C-ULB00
Samsung Semiconductor
Description: DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66

Overview of K4H511638C-ULB00 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Education and Research Consumer Electronics Computing and Data Storage

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Part Data Attributes for K4H511638C-ULB00 by Samsung Semiconductor

K4H511638C-ULB00
Samsung Semiconductor
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
TSSOP, TSSOP66,.46
Pin Count
66
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.28
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.75 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
2,4,8
JESD-30 Code
R-PDSO-G66
Length
22.22 mm
Memory Density
536870912 bit
Memory IC Type
DDR1 DRAM
Memory Width
16
Moisture Sensitivity Level
2
Number of Functions
1
Number of Ports
1
Number of Terminals
66
Number of Words
33554432 words
Number of Words Code
32000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
32MX16
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
TSSOP
Package Equivalence Code
TSSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
2,4,8
Standby Current-Max
0.005 A
Supply Current-Max
0.345 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.65 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. K4H511638C-ULB00
    Samsung Semiconductor
    DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66
    VS

Alternate Parts for K4H511638C-ULB00

This table gives cross-reference parts and alternative options found for K4H511638C-ULB00. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H511638C-ULB00, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MT46V32M16TG-75:F DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-ULB00 vs MT46V32M16TG-75:F
MT46V32M16TG-75E:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-ULB00 vs MT46V32M16TG-75E:C
K4H511638D-UCB00 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H511638C-ULB00 vs K4H511638D-UCB00
K4H511638B-ULA2 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638C-ULB00 vs K4H511638B-ULA2
K4H511638B-ULB0 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638C-ULB00 vs K4H511638B-ULB0
K4H511638D-ULA2 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638C-ULB00 vs K4H511638D-ULA2
K4H511638B-TCB0 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H511638C-ULB00 vs K4H511638B-TCB0
K4H511638D-ULA2T Cache DRAM Module, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638C-ULB00 vs K4H511638D-ULA2T
MT46V32M16P-75EL:C DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-ULB00 vs MT46V32M16P-75EL:C
K4H511638B-UCB0 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 Samsung Semiconductor K4H511638C-ULB00 vs K4H511638B-UCB0
Part Number Description Manufacturer Compare
IS43R16320B-5TL DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, PLASTIC, TSOP2-66 Integrated Silicon Solution Inc K4H511638C-ULB00 vs IS43R16320B-5TL
HYI25DC512160DE-5A DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG K4H511638C-ULB00 vs HYI25DC512160DE-5A
K4H511638B-TCA2 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H511638C-ULB00 vs K4H511638B-TCA2
MT46V32M16TG-75ZL DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-ULB00 vs MT46V32M16TG-75ZL
HYB25D512160AEL-7 DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP2-66 Infineon Technologies AG K4H511638C-ULB00 vs HYB25D512160AEL-7
MT46V32M16P-5BIT:C DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-ULB00 vs MT46V32M16P-5BIT:C
IS43R16320D-6BI DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-60 Integrated Silicon Solution Inc K4H511638C-ULB00 vs IS43R16320D-6BI
HYB25D512160CEL-6 DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 Qimonda AG K4H511638C-ULB00 vs HYB25D512160CEL-6
HY5DU121622BLT-J DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc K4H511638C-ULB00 vs HY5DU121622BLT-J
MT46V32M16P-75ZLIT DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H511638C-ULB00 vs MT46V32M16P-75ZLIT

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