Part Details for K4H510838G-LLB30 by Samsung Semiconductor
Overview of K4H510838G-LLB30 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Entertainment and Gaming
Part Details for K4H510838G-LLB30
K4H510838G-LLB30 CAD Models
K4H510838G-LLB30 Part Data Attributes
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K4H510838G-LLB30
Samsung Semiconductor
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Datasheet
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K4H510838G-LLB30
Samsung Semiconductor
DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66,
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Time-Max | 0.7 ns | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| JESD-609 Code | e6 | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 3 | |
| Number of Terminals | 66 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.22 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | TIN BISMUTH | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.635 mm | |
| Terminal Position | DUAL |
Alternate Parts for K4H510838G-LLB30
This table gives cross-reference parts and alternative options found for K4H510838G-LLB30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510838G-LLB30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V64M8P-6TL:F | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838G-LLB30 vs MT46V64M8P-6TL:F |
| K4H510838B-TCB3 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H510838G-LLB30 vs K4H510838B-TCB3 |
| H5DU5182ETR-J3L | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | SK Hynix Inc | K4H510838G-LLB30 vs H5DU5182ETR-J3L |
| K4H510838B-TCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H510838G-LLB30 vs K4H510838B-TCB30 |
| K4H510838D-UCB30 | DDR DRAM, 64MX8, 0.6ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H510838G-LLB30 vs K4H510838D-UCB30 |
| K4H510838C-UCB3T | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H510838G-LLB30 vs K4H510838C-UCB3T |
| K4H510838D-ULB30 | DDR DRAM, 64MX8, 0.6ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H510838G-LLB30 vs K4H510838D-ULB30 |
| MT46V64M8TG-6T:D | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838G-LLB30 vs MT46V64M8TG-6T:D |
| MT46V64M8P-6T:D | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838G-LLB30 vs MT46V64M8P-6T:D |
| K4H510838C-UCB30 | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H510838G-LLB30 vs K4H510838C-UCB30 |