There are no models available for this part yet.
Overview of K4H510838B-TLB00 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Computing and Data Storage
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Entertainment and Gaming
CAD Models for K4H510838B-TLB00 by Samsung Semiconductor
Part Data Attributes for K4H510838B-TLB00 by Samsung Semiconductor
|
|
|
|---|---|
|
Rohs Code
|
No
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
|
Part Package Code
|
TSOP2
|
|
Package Description
|
TSOP2, TSSOP66,.46
|
|
Pin Count
|
66
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8542.32.00.28
|
|
Access Mode
|
FOUR BANK PAGE BURST
|
|
Access Time-Max
|
0.75 ns
|
|
Additional Feature
|
AUTO/SELF REFRESH
|
|
Clock Frequency-Max (fCLK)
|
133 MHz
|
|
I/O Type
|
COMMON
|
|
Interleaved Burst Length
|
2,4,8
|
|
JESD-30 Code
|
R-PDSO-G66
|
|
JESD-609 Code
|
e0
|
|
Length
|
22.22 mm
|
|
Memory Density
|
536870912 bit
|
|
Memory IC Type
|
DDR1 DRAM
|
|
Memory Width
|
8
|
|
Number of Functions
|
1
|
|
Number of Ports
|
1
|
|
Number of Terminals
|
66
|
|
Number of Words
|
67108864 words
|
|
Number of Words Code
|
64000000
|
|
Operating Mode
|
SYNCHRONOUS
|
|
Operating Temperature-Max
|
70 °C
|
|
Operating Temperature-Min
|
|
|
Organization
|
64MX8
|
|
Output Characteristics
|
3-STATE
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Code
|
TSOP2
|
|
Package Equivalence Code
|
TSSOP66,.46
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE, THIN PROFILE
|
|
Qualification Status
|
Not Qualified
|
|
Refresh Cycles
|
8192
|
|
Seated Height-Max
|
1.2 mm
|
|
Self Refresh
|
YES
|
|
Sequential Burst Length
|
2,4,8
|
|
Standby Current-Max
|
0.005 A
|
|
Supply Current-Max
|
0.34 mA
|
|
Supply Voltage-Max (Vsup)
|
2.7 V
|
|
Supply Voltage-Min (Vsup)
|
2.3 V
|
|
Supply Voltage-Nom (Vsup)
|
2.5 V
|
|
Surface Mount
|
YES
|
|
Technology
|
CMOS
|
|
Temperature Grade
|
COMMERCIAL
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
GULL WING
|
|
Terminal Pitch
|
0.65 mm
|
|
Terminal Position
|
DUAL
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|
Width
|
10.16 mm
|
Alternate Parts for K4H510838B-TLB00
This table gives cross-reference parts and alternative options found for K4H510838B-TLB00. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510838B-TLB00, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V64M8TG-75L:C | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838B-TLB00 vs MT46V64M8TG-75L:C |
| MT46V64M8P-75:D | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838B-TLB00 vs MT46V64M8P-75:D |
| MT46V64M8P-75:F | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838B-TLB00 vs MT46V64M8P-75:F |
| MT46V64M8TG-75Z | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838B-TLB00 vs MT46V64M8TG-75Z |
| K4H510838B-TLAA | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | K4H510838B-TLB00 vs K4H510838B-TLAA |
| MT46V64M8TG-75E:D | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838B-TLB00 vs MT46V64M8TG-75E:D |
| MT46V64M8TG-75Z:C | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838B-TLB00 vs MT46V64M8TG-75Z:C |
| MT46V64M8TG-75E:C | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838B-TLB00 vs MT46V64M8TG-75E:C |
| MT46V64M8P-75ZL | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838B-TLB00 vs MT46V64M8P-75ZL |
| MT46V64M8TG-75ZL:F | DDR DRAM, 64MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510838B-TLB00 vs MT46V64M8TG-75ZL:F |