Part Details for K4H510438D-UCB3TE0 by Samsung Semiconductor
Overview of K4H510438D-UCB3TE0 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Part Details for K4H510438D-UCB3TE0
K4H510438D-UCB3TE0 CAD Models
K4H510438D-UCB3TE0 Part Data Attributes
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K4H510438D-UCB3TE0
Samsung Semiconductor
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Datasheet
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K4H510438D-UCB3TE0
Samsung Semiconductor
DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSSOP, | |
Pin Count | 66 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.28 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 0.7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
JESD-30 Code | R-PDSO-G66 | |
Length | 22.22 mm | |
Memory Density | 536870912 bit | |
Memory IC Type | DDR DRAM | |
Memory Width | 4 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 66 | |
Number of Words | 134217728 words | |
Number of Words Code | 128000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 128MX4 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSSOP | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 2.7 V | |
Supply Voltage-Min (Vsup) | 2.3 V | |
Supply Voltage-Nom (Vsup) | 2.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.65 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for K4H510438D-UCB3TE0
This table gives cross-reference parts and alternative options found for K4H510438D-UCB3TE0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H510438D-UCB3TE0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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V58C2512404SALI6I | 128MX4 DDR DRAM, 0.7ns, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | K4H510438D-UCB3TE0 vs V58C2512404SALI6I |
MT46V128M4TG-6LIT:D | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3TE0 vs MT46V128M4TG-6LIT:D |
MT46V128M4P-6TAT:D | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3TE0 vs MT46V128M4P-6TAT:D |
HYB25D512400CT-5 | DDR DRAM, 128MX4, 0.5ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Infineon Technologies AG | K4H510438D-UCB3TE0 vs HYB25D512400CT-5 |
V58C2512404SAI-5I | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | K4H510438D-UCB3TE0 vs V58C2512404SAI-5I |
MT46V128M4TG-6L:D | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3TE0 vs MT46V128M4TG-6L:D |
K4H510438D-UCB30 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H510438D-UCB3TE0 vs K4H510438D-UCB30 |
MT46V128M4P-6:F | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | K4H510438D-UCB3TE0 vs MT46V128M4P-6:F |
HYB25D512400CE-5 | DDR DRAM, 128MX4, 0.5ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66 | Infineon Technologies AG | K4H510438D-UCB3TE0 vs HYB25D512400CE-5 |
K4H510438C-UCB3TE0 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | K4H510438D-UCB3TE0 vs K4H510438C-UCB3TE0 |