Datasheets
MT46V128M4TG-6L:D by: Micron Technology Inc

DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66

Part Details for MT46V128M4TG-6L:D by Micron Technology Inc

Overview of MT46V128M4TG-6L:D by Micron Technology Inc

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Applications Internet of Things (IoT) Electronic Manufacturing

Available Datasheets

Part # Manufacturer Description Datasheet
DBL5W5P543A40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 5W5 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Without Accessory on PCB.
DEL2V2P543H40LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 2V2 Pin Right Angle Solder 40A, Europe Standard, 500 Cycles, Front: Threaded Insert M3, Back: Harpoons for 2.4mm PCB Thickness.
DC8W8P500H30LF Amphenol Communications Solutions D-Sub Power Board Mount Connectors, Input Output Connectors, Full Power 8W8 Pin Right Angle Solder 30A, Europe Standard, 200 Cycles, Front: Without Accessory, Back: Harpoons for 2.4mm PCB Thickness.

Part Details for MT46V128M4TG-6L:D

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MT46V128M4TG-6L:D Part Data Attributes

MT46V128M4TG-6L:D Micron Technology Inc
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MT46V128M4TG-6L:D Micron Technology Inc DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code TSOP
Package Description TSSOP,
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e0
Length 22.22 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 134217728 words
Number of Words Code 128000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 128MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for MT46V128M4TG-6L:D

This table gives cross-reference parts and alternative options found for MT46V128M4TG-6L:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V128M4TG-6L:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V58C512404SBLT-6 DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc MT46V128M4TG-6L:D vs V58C512404SBLT-6
MT46V128M4TG-6LIT:D DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4TG-6L:D vs MT46V128M4TG-6LIT:D
K4H510438C-UCB3TE0 DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor MT46V128M4TG-6L:D vs K4H510438C-UCB3TE0
V58C2512404SALI6I 128MX4 DDR DRAM, 0.7ns, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc MT46V128M4TG-6L:D vs V58C2512404SALI6I
MT46V128M4TG-6:D DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4TG-6L:D vs MT46V128M4TG-6:D
MT46V128M4TG-6TAT:D DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4TG-6L:D vs MT46V128M4TG-6TAT:D
V58C2512404SAE6I DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc MT46V128M4TG-6L:D vs V58C2512404SAE6I
MT46V128M4TG-6L:F DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4TG-6L:D vs MT46V128M4TG-6L:F
V58C512404SBI-6 DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, GREEN, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc MT46V128M4TG-6L:D vs V58C512404SBI-6
MT46V128M4P-6LIT:D DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4TG-6L:D vs MT46V128M4P-6LIT:D
Part Number Description Manufacturer Compare
MT46V128M4P-75L DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4TG-6L:D vs MT46V128M4P-75L
EDD5104ADTA-7AL DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Elpida Memory Inc MT46V128M4TG-6L:D vs EDD5104ADTA-7AL
MT46V128M4P-5BLIT DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc MT46V128M4TG-6L:D vs MT46V128M4P-5BLIT
V58C2512404SDLI5B DDR DRAM, 128MX4, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc MT46V128M4TG-6L:D vs V58C2512404SDLI5B
K4H510438J-LCB00 DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor MT46V128M4TG-6L:D vs K4H510438J-LCB00
V58C2512404SDUI36I DDR DRAM, 128MX4, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 ProMOS Technologies Inc MT46V128M4TG-6L:D vs V58C2512404SDUI36I
K4H510438B-TLB30 DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor MT46V128M4TG-6L:D vs K4H510438B-TLB30
K4H510438C-ULB30 DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor MT46V128M4TG-6L:D vs K4H510438C-ULB30
K4H510438M-TLA00 DDR DRAM, 128MX4, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor MT46V128M4TG-6L:D vs K4H510438M-TLA00
K4H510438J-LPB00 DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor MT46V128M4TG-6L:D vs K4H510438J-LPB00

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