Part Details for V58C2512404SDLI6E by ProMOS Technologies Inc
Overview of V58C2512404SDLI6E by ProMOS Technologies Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Computing and Data Storage
Part Details for V58C2512404SDLI6E
V58C2512404SDLI6E CAD Models
V58C2512404SDLI6E Part Data Attributes
|
|
V58C2512404SDLI6E
ProMOS Technologies Inc
Buy Now
Datasheet
|
Compare Parts:
V58C2512404SDLI6E
ProMOS Technologies Inc
DDR DRAM, 128MX4, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | PROMOS TECHNOLOGIES INC | |
| Part Package Code | TSSOP2 | |
| Package Description | TSOP2, | |
| Pin Count | 66 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.28 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Additional Feature | AUTO/SELF REFRESH | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 536870912 bit | |
| Memory IC Type | DDR DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 134217728 words | |
| Number of Words Code | 128000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 125 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 128MX4 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | AUTOMOTIVE | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 10.16 mm |
Alternate Parts for V58C2512404SDLI6E
This table gives cross-reference parts and alternative options found for V58C2512404SDLI6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of V58C2512404SDLI6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MT46V128M4P-75L | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | V58C2512404SDLI6E vs MT46V128M4P-75L |
| EDD5104ADTA-7AL | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 | Elpida Memory Inc | V58C2512404SDLI6E vs EDD5104ADTA-7AL |
| MT46V128M4P-5BLIT | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 | Micron Technology Inc | V58C2512404SDLI6E vs MT46V128M4P-5BLIT |
| V58C2512404SDLI5B | DDR DRAM, 128MX4, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | V58C2512404SDLI6E vs V58C2512404SDLI5B |
| K4H510438J-LCB00 | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | V58C2512404SDLI6E vs K4H510438J-LCB00 |
| V58C2512404SDUI36I | DDR DRAM, 128MX4, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, PLASTIC, MS-024FC, TSOP2-66 | ProMOS Technologies Inc | V58C2512404SDLI6E vs V58C2512404SDUI36I |
| K4H510438B-TLB30 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | V58C2512404SDLI6E vs K4H510438B-TLB30 |
| K4H510438C-ULB30 | DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | V58C2512404SDLI6E vs K4H510438C-ULB30 |
| K4H510438M-TLA00 | DDR DRAM, 128MX4, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | Samsung Semiconductor | V58C2512404SDLI6E vs K4H510438M-TLA00 |
| K4H510438J-LPB00 | DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66 | Samsung Semiconductor | V58C2512404SDLI6E vs K4H510438J-LPB00 |