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Memory / DRAMs / K4C89183AF-ACFB0
Datasheets
K4C89183AF-ACFB0 by: Samsung Semiconductor

DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60

Part Details for K4C89183AF-ACFB0 by Samsung Semiconductor

Overview of K4C89183AF-ACFB0 by Samsung Semiconductor

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Applications Consumer Electronics Computing and Data Storage

Part Details for K4C89183AF-ACFB0

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K4C89183AF-ACFB0 Part Data Attributes

Parametric Data
K4C89183AF-ACFB0 Samsung Semiconductor
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K4C89183AF-ACFB0 Samsung Semiconductor DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA
Package Description TBGA,
Pin Count 60
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.5 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PBGA-B60
JESD-609 Code e0
Length 15.5 mm
Memory Density 301989888 bit
Memory IC Type DDR1 DRAM
Memory Width 18
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 16MX18
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 2.625 V
Supply Voltage-Min (Vsup) 2.375 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish TIN LEAD
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 10.5 mm

Alternate Parts for K4C89183AF-ACFB0

This table gives cross-reference parts and alternative options found for K4C89183AF-ACFB0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4C89183AF-ACFB0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4C89183AF-ACF60 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor K4C89183AF-ACFB0 vs K4C89183AF-ACF60
Part Number Description Manufacturer Compare
K4C89183AF-GCF6 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor K4C89183AF-ACFB0 vs K4C89183AF-GCF6
K4C89183AF-ACF60 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor K4C89183AF-ACFB0 vs K4C89183AF-ACF60
K4C89183AF-GCG70 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor K4C89183AF-ACFB0 vs K4C89183AF-GCG70
K4C89183AF-GCF50 DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 X 1 MM PITCH, FBGA-60 Samsung Semiconductor K4C89183AF-ACFB0 vs K4C89183AF-GCF50
TC59LM818DMGI-37 IC 16M X 18 DDR DRAM, 0.65 ns, PBGA60, 9 X 17 MM, 1.00 MM PITCH, LEAD FREE, PLASTIC, TFBGA-60, Dynamic RAM Toshiba America Electronic Components K4C89183AF-ACFB0 vs TC59LM818DMGI-37
K4C89183AF-GCF5 DDR DRAM, 16MX18, 0.6ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor K4C89183AF-ACFB0 vs K4C89183AF-GCF5
TC59LM818DMB-40 IC 16M X 18 DDR DRAM, 0.65 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM Toshiba America Electronic Components K4C89183AF-ACFB0 vs TC59LM818DMB-40
TC59LM818DMBI-37 IC 16M X 18 DDR DRAM, 0.65 ns, PBGA60, 9 X 17 MM, 1 MM PITCH, PLASTIC, BGA-60, Dynamic RAM Toshiba America Electronic Components K4C89183AF-ACFB0 vs TC59LM818DMBI-37
K4C89183AF-GCFB DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor K4C89183AF-ACFB0 vs K4C89183AF-GCFB
K4C89183AF-GIG70 DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 Samsung Semiconductor K4C89183AF-ACFB0 vs K4C89183AF-GIG70

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