Part Details for K3N5U1000E-DC12 by Samsung Semiconductor
Overview of K3N5U1000E-DC12 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DC1211A-A | Analog Devices | LTC3528EDDB - 1A, 1MHz Synch B | |
| DC1219A-D | Analog Devices | LT3495BEDDB-1 Demo Board - 3-6 | |
| DC1228A | Analog Devices | LT3573EMSE - 24Vin to 5Vout at |
Part Details for K3N5U1000E-DC12
K3N5U1000E-DC12 CAD Models
K3N5U1000E-DC12 Part Data Attributes
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K3N5U1000E-DC12
Samsung Semiconductor
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K3N5U1000E-DC12
Samsung Semiconductor
MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | DIP | |
| Package Description | DIP, DIP42,.6 | |
| Pin Count | 42 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.71 | |
| Access Time-Max | 120 ns | |
| Alternate Memory Width | 8 | |
| JESD-30 Code | R-PDIP-T42 | |
| JESD-609 Code | e0 | |
| Length | 52.42 mm | |
| Memory Density | 16777216 bit | |
| Memory IC Type | MASK ROM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Terminals | 42 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX16 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | DIP | |
| Package Equivalence Code | DIP42,.6 | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 5.08 mm | |
| Standby Current-Max | 0.00003 A | |
| Supply Current-Max | 0.035 mA | |
| Supply Voltage-Max (Vsup) | 3.3 V | |
| Supply Voltage-Min (Vsup) | 2.7 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Pitch | 2.54 mm | |
| Terminal Position | DUAL | |
| Width | 15.24 mm |
Alternate Parts for K3N5U1000E-DC12
This table gives cross-reference parts and alternative options found for K3N5U1000E-DC12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K3N5U1000E-DC12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| K3P5V1000F-DC120 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | Samsung Semiconductor | K3N5U1000E-DC12 vs K3P5V1000F-DC120 |
| KM23V16000D-12 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | Samsung Semiconductor | K3N5U1000E-DC12 vs KM23V16000D-12 |
| K3P5V1000D-DC12 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | Samsung Semiconductor | K3N5U1000E-DC12 vs K3P5V1000D-DC12 |
| KM23V16005D-12 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | Samsung Semiconductor | K3N5U1000E-DC12 vs KM23V16005D-12 |
| K3P5U1000F-DC12 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | Samsung Semiconductor | K3N5U1000E-DC12 vs K3P5U1000F-DC12 |
| HY23V16202D-120 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | SK Hynix Inc | K3N5U1000E-DC12 vs HY23V16202D-120 |
| K3N5V1000E-DC12 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | Samsung Semiconductor | K3N5U1000E-DC12 vs K3N5V1000E-DC12 |
| MX23L1611PC-12 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 | Macronix International Co Ltd | K3N5U1000E-DC12 vs MX23L1611PC-12 |
| K3P5V1000F-DC12 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | Samsung Semiconductor | K3N5U1000E-DC12 vs K3P5V1000F-DC12 |
| K3N5V1000F-DC12 | MASK ROM, 1MX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | Samsung Semiconductor | K3N5U1000E-DC12 vs K3N5V1000F-DC12 |