| Infineon Technologies AG |
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN |
$188.5000
|
|
View Details |
| International Rectifier |
|
$65.4375 / $103.6000
|
|
View Details |
| Harris Semiconductor |
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
$72.0000 / $78.0000
|
|
View Details |
| Omnirel Corp |
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN |
$114.0530
|
|
View Details |
| Microsemi Corporation |
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN |
|
|
View Details |
| Semicoa Semiconductors |
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 |
|
|
View Details |
| Intersil Corporation |
27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
|
|
View Details |
| Defense Logistics Agency |
Power Field-Effect Transistor, 27.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN |
|
|
View Details |
| Voltage Multipliers Inc |
Power Field-Effect Transistor, 27.4A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN |
|
|
View Details |