Part Details for JANTXV2N6849U by Infineon Technologies AG
Overview of JANTXV2N6849U by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Price & Stock for JANTXV2N6849U
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 | 0 |
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$110.4000 | Buy Now |
Part Details for JANTXV2N6849U
JANTXV2N6849U CAD Models
JANTXV2N6849U Part Data Attributes
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JANTXV2N6849U
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
JANTXV2N6849U
Infineon Technologies AG
Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, LCC-18 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 165 mJ | |
| Case Connection | SOURCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 6.5 A | |
| Drain-source On Resistance-Max | 0.345 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CQCC-N15 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 15 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/564 | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | QUAD | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6849U
This table gives cross-reference parts and alternative options found for JANTXV2N6849U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6849U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTXV2N6849U | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Microsemi Corporation | JANTXV2N6849U vs JANTXV2N6849U |
| JAN2N6849U | Power Field-Effect Transistor, | Microsemi Corporation | JANTXV2N6849U vs JAN2N6849U |
| JANTX2N6849U | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JANTXV2N6849U vs JANTX2N6849U |
| JANTX2N6849U | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Microsemi Corporation | JANTXV2N6849U vs JANTX2N6849U |