Part Details for JAN2N6849U by Microsemi Corporation
Overview of JAN2N6849U by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Part Details for JAN2N6849U
JAN2N6849U CAD Models
JAN2N6849U Part Data Attributes
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JAN2N6849U
Microsemi Corporation
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Datasheet
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JAN2N6849U
Microsemi Corporation
Power Field-Effect Transistor,
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICROSEMI CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Microsemi Corporation | |
Qualification Status | Qualified |
Alternate Parts for JAN2N6849U
This table gives cross-reference parts and alternative options found for JAN2N6849U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6849U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANTXV2N6849U | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Microsemi Corporation | JAN2N6849U vs JANTXV2N6849U |
JANTX2N6849U | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JAN2N6849U vs JANTX2N6849U |
JANTXV2N6849U | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Infineon Technologies AG | JAN2N6849U vs JANTXV2N6849U |
JANTX2N6849U | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.345ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18 | Microsemi Corporation | JAN2N6849U vs JANTX2N6849U |