JANTXV2N6849U
vs
JANTX2N6849U
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MICROSEMI CORP
|
| Package Description |
HERMETIC SEALED, LCC-18
|
HERMETIC SEALED, LCC-18
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
165 mJ
|
165 mJ
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
6.5 A
|
6.5 A
|
| Drain-source On Resistance-Max |
0.345 Ω
|
0.345 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-CQCC-N15
|
R-CQCC-N15
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
15
|
15
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
25 W
|
|
| Pulsed Drain Current-Max (IDM) |
25 A
|
25 A
|
| Qualification Status |
Qualified
|
Qualified
|
| Reference Standard |
MIL-19500/564
|
MIL-19500/564
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
QUAD
|
QUAD
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Samacsys Manufacturer |
|
Microsemi Corporation
|
|
|
|
Compare JANTXV2N6849U with alternatives
Compare JANTX2N6849U with alternatives