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JANTX2N6782
International Rectifier
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$6.0000 | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 3.5 A | 690 mΩ | AVALANCHE RATED | 68 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 14 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Qualified | MIL-19500/556 | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | BCY | CYLINDRICAL, O-MBCY-W3 | 2 | unknown | EAR99 | ||||||||||||||
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JANTX2N6782U
Microsemi Corporation
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$29.9129 | No | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 3.5 A | 610 mΩ | 7 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 14 A | SWITCHING | SILICON | R-CQCC-N15 | e0 | Qualified | MIL-19500 | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | TIN LEAD | NO LEAD | QUAD | MICROSEMI CORP | LCC | CERAMIC, LCC-18 | 18 | unknown | EAR99 | ||||||||||||||
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JANTX2N6782TR
Microsemi Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 3.5 A | 600 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-39 | O-MBCY-W3 | Not Qualified | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | MICROSEMI CORP | CYLINDRICAL, O-MBCY-W3 | compliant | EAR99 | ||||||||||||||||||||||||
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JANTX2N6782
Harris Semiconductor
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 3.5 A | 600 mΩ | RADIATION HARDENED | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 15 W | 14 A | SWITCHING | SILICON | 45 ns | 40 ns | TO-205AF | O-MBCY-W3 | Not Qualified | MILITARY STANDARD (USA) | 150 °C | DRAIN | METAL | ROUND | CYLINDRICAL | NOT SPECIFIED | WIRE | BOTTOM | HARRIS SEMICONDUCTOR | unknown | EAR99 | 8541.29.00.95 | |||||||||||||
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JANTX2N6782
Infineon Technologies AG
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Check for Price | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 3.5 A | 690 mΩ | AVALANCHE RATED | 68 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 15 W | 14 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Qualified | MIL-19500/556 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | INFINEON TECHNOLOGIES AG | CYLINDRICAL, O-MBCY-W3 | not_compliant | EAR99 | Infineon | |||||||||||
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JANTX2N6782U
International Rectifier
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Check for Price | No | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 3.5 A | 690 mΩ | 7 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 14 A | SWITCHING | SILICON | R-CQCC-N15 | Qualified | MIL-19500/556 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | LCC | CHIP CARRIER, R-CQCC-N15 | 18 | unknown | EAR99 | ||||||||||||||
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JANTX2N6782
Motorola Mobility LLC
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 3.5 A | 600 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 14 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Not Qualified | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | MOTOROLA INC | CYLINDRICAL, O-MBCY-W3 | unknown | EAR99 | ||||||||||||||||||||||
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JANTX2N6782
Intersil Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 3.5 A | 600 mΩ | RADIATION HARDENED | 25 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 15 W | 14 A | SWITCHING | SILICON | 45 ns | 40 ns | TO-205AF | O-MBCY-W3 | Not Qualified | MILITARY STANDARD (USA) | 150 °C | DRAIN | METAL | ROUND | CYLINDRICAL | NOT SPECIFIED | WIRE | BOTTOM | INTERSIL CORP | not_compliant | EAR99 | 8541.29.00.95 | ||||||||||||
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JANTX2N6782
Microsemi Corporation
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Check for Price | No | No | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 3.5 A | 600 mΩ | RADIATION HARDENED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 15 W | 14 A | SWITCHING | SILICON | TO-39 | O-MBCY-W3 | e0 | Qualified | MIL-19500 | 150 °C | DRAIN | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | MICROSEMI CORP | unknown | EAR99 | ||||||||||||||
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JANTX2N6782PBF
Infineon Technologies AG
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 3.5 A | 690 mΩ | AVALANCHE RATED | 68 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 14 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | MIL-19500/556 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | INFINEON TECHNOLOGIES AG | CYLINDRICAL, O-MBCY-W3 | compliant | EAR99 |