Part Details for JANSH2N7269 by International Rectifier
Overview of JANSH2N7269 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JANSH2N7269
JANSH2N7269 CAD Models
JANSH2N7269 Part Data Attributes
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JANSH2N7269
International Rectifier
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Datasheet
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JANSH2N7269
International Rectifier
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-254AA | |
| Package Description | FLANGE MOUNT, S-XSFM-P3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | RADIATION HARDENED | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.11 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-254AA | |
| JESD-30 Code | S-XSFM-P3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | SQUARE | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 104 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/603 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 280 ns | |
| Turn-on Time-Max (ton) | 173 ns |
Alternate Parts for JANSH2N7269
This table gives cross-reference parts and alternative options found for JANSH2N7269. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSH2N7269, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTXVH2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | JANSH2N7269 vs JANTXVH2N7269 |
| JANSH2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | JANSH2N7269 vs JANSH2N7269 |
| JANSR2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Microsemi Corporation | JANSH2N7269 vs JANSR2N7269 |
| JANSR2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | JANSH2N7269 vs JANSR2N7269 |
| IRHM8250 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | JANSH2N7269 vs IRHM8250 |
| IRHM7250 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | International Rectifier | JANSH2N7269 vs IRHM7250 |
| JANS2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | JANSH2N7269 vs JANS2N7269 |
| 2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | JANSH2N7269 vs 2N7269 |
| IRHM8250PBF | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | International Rectifier | JANSH2N7269 vs IRHM8250PBF |
| IRHM8250 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | International Rectifier | JANSH2N7269 vs IRHM8250 |