Datasheets
JANSH2N7269 by:

Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

Part Details for JANSH2N7269 by Infineon Technologies AG

Overview of JANSH2N7269 by Infineon Technologies AG

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Part Details for JANSH2N7269

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JANSH2N7269 Part Data Attributes

JANSH2N7269 Infineon Technologies AG
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JANSH2N7269 Infineon Technologies AG Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, S-XSFM-P3
Reach Compliance Code not_compliant
ECCN Code 3A001.A.1.A
Additional Feature RADIATION HARDENED
Avalanche Energy Rating (Eas) 500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 26 A
Drain-source On Resistance-Max 0.11 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-XSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 104 A
Qualification Status Qualified
Reference Standard MIL-19500/603
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANSH2N7269

This table gives cross-reference parts and alternative options found for JANSH2N7269. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSH2N7269, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANSH2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANSH2N7269 vs JANSH2N7269
JANSR2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANSH2N7269 vs JANSR2N7269
JANS2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN International Rectifier JANSH2N7269 vs JANS2N7269
IRHM7250 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANSH2N7269 vs IRHM7250
IRHM7250PBF Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 International Rectifier JANSH2N7269 vs IRHM7250PBF
JANTXV2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN International Rectifier JANSH2N7269 vs JANTXV2N7269
IRHM8250PBF Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 International Rectifier JANSH2N7269 vs IRHM8250PBF
2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANSH2N7269 vs 2N7269
Part Number Description Manufacturer Compare
IRHM7250 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANSH2N7269 vs IRHM7250
IRHM7250PBF Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 International Rectifier JANSH2N7269 vs IRHM7250PBF
IRHM8250PBF Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 International Rectifier JANSH2N7269 vs IRHM8250PBF
JANSR2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Infineon Technologies AG JANSH2N7269 vs JANSR2N7269
JANTXV2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN International Rectifier JANSH2N7269 vs JANTXV2N7269
2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANSH2N7269 vs 2N7269
JANSR2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN Microsemi Corporation JANSH2N7269 vs JANSR2N7269
JANS2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN International Rectifier JANSH2N7269 vs JANS2N7269
JANSH2N7269 Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANSH2N7269 vs JANSH2N7269

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