Part Details for IRHM8250PBF by International Rectifier
Overview of IRHM8250PBF by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRHM8250PBF
IRHM8250PBF CAD Models
IRHM8250PBF Part Data Attributes
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IRHM8250PBF
International Rectifier
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Datasheet
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IRHM8250PBF
International Rectifier
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-254AA | |
Package Description | FLANGE MOUNT, S-XSFM-P3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | RADIATION HARDENED | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 26 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-XSFM-P3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 150 W | |
Pulsed Drain Current-Max (IDM) | 104 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 280 ns | |
Turn-on Time-Max (ton) | 173 ns |
Alternate Parts for IRHM8250PBF
This table gives cross-reference parts and alternative options found for IRHM8250PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRHM8250PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANTXVH2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | IRHM8250PBF vs JANTXVH2N7269 |
JANSH2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | IRHM8250PBF vs JANSH2N7269 |
JANSR2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | Microsemi Corporation | IRHM8250PBF vs JANSR2N7269 |
JANSR2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | IRHM8250PBF vs JANSR2N7269 |
IRHM8250 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | Infineon Technologies AG | IRHM8250PBF vs IRHM8250 |
IRHM7250 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | International Rectifier | IRHM8250PBF vs IRHM7250 |
JANS2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PIN | International Rectifier | IRHM8250PBF vs JANS2N7269 |
2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRHM8250PBF vs 2N7269 |
JANSH2N7269 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRHM8250PBF vs JANSH2N7269 |
IRHM8250 | Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 | International Rectifier | IRHM8250PBF vs IRHM8250 |