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Transistors IGBTs IRG4PC50FDPBF

IRG4PC50FDPBF
Description: Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3

Overview of IRG4PC50FDPBF by Infineon Technologies AG

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Where used in Applications: Industrial Automation Electronic Manufacturing

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Part Data Attributes for IRG4PC50FDPBF by Infineon Technologies AG
Parametric Data

IRG4PC50FDPBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
compliant
ECCN Code
EAR99
Date Of Intro
1997-04-17
Samacsys Manufacturer
Infineon
Case Connection
COLLECTOR
Collector Current-Max (IC)
70 A
Collector-Emitter Voltage-Max
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf)
210 ns
Gate-Emitter Thr Voltage-Max
6 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-247AC
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
200 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
570 ns
Turn-off Time-Nom (toff)
380 ns
Turn-on Time-Nom (ton)
80 ns
VCEsat-Max
1.6 V
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  1. IRG4PC50FDPBF
    Infineon Technologies AG
    Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
    VS

Alternate Parts for IRG4PC50FDPBF

This table gives cross-reference parts and alternative options found for IRG4PC50FDPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4PC50FDPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRG4PC50FD Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN International Rectifier IRG4PC50FDPBF vs IRG4PC50FD
IRG4PC50FDPBF Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRG4PC50FDPBF vs IRG4PC50FDPBF
Part Number Description Manufacturer Compare
SGP13N60UF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRG4PC50FDPBF vs SGP13N60UF
IXGH25N100U1 Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IRG4PC50FDPBF vs IXGH25N100U1
HGTG40N60B3_NL Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN Fairchild Semiconductor Corporation IRG4PC50FDPBF vs HGTG40N60B3_NL
IRG4PC30FPBF Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 Infineon Technologies AG IRG4PC50FDPBF vs IRG4PC30FPBF
IRGPS40B120U Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, SUPER-247, 3 PIN International Rectifier IRG4PC50FDPBF vs IRGPS40B120U
HGTP15N50C1 Insulated Gate Bipolar Transistor, 15A I(C), 500V V(BR)CES, N-Channel, TO-220AB Harris Semiconductor IRG4PC50FDPBF vs HGTP15N50C1
IRG4BC30U-SPBF Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRG4PC50FDPBF vs IRG4BC30U-SPBF
IXGH32N60B Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4PC50FDPBF vs IXGH32N60B
IRG4BC15UD-SPBF Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4PC50FDPBF vs IRG4BC15UD-SPBF
HGTP6N50E1D Insulated Gate Bipolar Transistor, 7.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IRG4PC50FDPBF vs HGTP6N50E1D

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