Datasheets
IRG4BC40WPBF by:

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

Part Details for IRG4BC40WPBF by Infineon Technologies AG

Overview of IRG4BC40WPBF by Infineon Technologies AG

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Price & Stock for IRG4BC40WPBF

Part # Distributor Description Stock Price Buy
DISTI # 70411440
RS IRG4BC40WPBF, 40 A 600 V, 3-Pin TO-220AB | Infineon IRG4BC40WPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $6.6700
  • 5 $6.2500
  • 10 $6.0800
  • 25 $5.8800
  • 50 $5.7600
$5.7600 / $6.6700 RFQ

Part Details for IRG4BC40WPBF

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IRG4BC40WPBF Part Data Attributes:

IRG4BC40WPBF Infineon Technologies AG
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IRG4BC40WPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description LEAD FREE PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 1997-06-16
Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 600 V
Configuration SINGLE
Fall Time-Max (tf) 110 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 174 ns
Turn-on Time-Nom (ton) 49 ns

Alternate Parts for IRG4BC40WPBF

This table gives cross-reference parts and alternative options found for IRG4BC40WPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRG4BC40WPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRG4BC40WPBF Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRG4BC40WPBF vs IRG4BC40WPBF
Part Number Description Manufacturer Compare
GT15H101 TRANSISTOR 15 A, 500 V, N-CHANNEL IGBT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor Toshiba America Electronic Components IRG4BC40WPBF vs GT15H101
IRGBC30FD2 Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN International Rectifier IRG4BC40WPBF vs IRGBC30FD2
IRGPC50U Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC International Rectifier IRG4BC40WPBF vs IRGPC50U
HGTD7N60C3S9A 14A,600V, UFS Series N-Channel IGBTs, 2500-REEL onsemi IRG4BC40WPBF vs HGTD7N60C3S9A
IRG4BC20W-STRLPBF Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRG4BC40WPBF vs IRG4BC20W-STRLPBF
IXGH36N60A3D4 Insulated Gate Bipolar Transistor, Littelfuse Inc IRG4BC40WPBF vs IXGH36N60A3D4
IRG4PH50UD Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, TO-247AC, TO-3P, 3 PIN Infineon Technologies AG IRG4BC40WPBF vs IRG4PH50UD
HGTG10N120BND 1200V, NPT IGBT, 450-TUBE onsemi IRG4BC40WPBF vs HGTG10N120BND
HGTP12N60C3DR Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-220AB Fairchild Semiconductor Corporation IRG4BC40WPBF vs HGTP12N60C3DR
IXGH12N60BD1 Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IRG4BC40WPBF vs IXGH12N60BD1

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