Datasheets
IRFZ46ZSTRLPBF by:

Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

Part Details for IRFZ46ZSTRLPBF by International Rectifier

Overview of IRFZ46ZSTRLPBF by International Rectifier

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Price & Stock for IRFZ46ZSTRLPBF

Part # Distributor Description Stock Price Buy
DISTI # 2156-IRFZ46ZSTRLPBF-IR-ND
DigiKey IRFZ46 - 12V-300V N-CHANNEL POWE Min Qty: 356 Container: Bulk MARKETPLACE PRODUCT 68376
In Stock
  • 356 $0.8400
$0.8400 Buy Now
Bristol Electronics   800
RFQ
Quest Components   640
  • 1 $2.2400
  • 269 $1.0360
  • 580 $0.9240
$0.9240 / $2.2400 Buy Now
Rochester Electronics IRFZ46 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 68376
  • 1 $0.8523
  • 25 $0.8353
  • 100 $0.8012
  • 500 $0.7671
  • 1,000 $0.7245
$0.7245 / $0.8523 Buy Now

Part Details for IRFZ46ZSTRLPBF

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IRFZ46ZSTRLPBF Part Data Attributes:

IRFZ46ZSTRLPBF International Rectifier
Buy Now Datasheet
Compare Parts:
IRFZ46ZSTRLPBF International Rectifier Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code D2PAK
Package Description LEAD FREE, PLASTIC, D2PAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 97 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 51 A
Drain-source On Resistance-Max 0.0136 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 82 W
Pulsed Drain Current-Max (IDM) 200 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFZ46ZSTRLPBF

This table gives cross-reference parts and alternative options found for IRFZ46ZSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ46ZSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFZ46ZSTRL Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 International Rectifier IRFZ46ZSTRLPBF vs IRFZ46ZSTRL
IRFZ46ZSTRLPBF Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 Infineon Technologies AG IRFZ46ZSTRLPBF vs IRFZ46ZSTRLPBF
Part Number Description Manufacturer Compare
MTD1N40-1 1A, 400V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 Motorola Mobility LLC IRFZ46ZSTRLPBF vs MTD1N40-1
IRF3710PBF Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 International Rectifier IRFZ46ZSTRLPBF vs IRF3710PBF
AUIRF1010EZL Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN International Rectifier IRFZ46ZSTRLPBF vs AUIRF1010EZL
IRL2505STRLPBF Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK , 3 PIN International Rectifier IRFZ46ZSTRLPBF vs IRL2505STRLPBF
AUIRFZ48ZS Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRFZ46ZSTRLPBF vs AUIRFZ48ZS
MTW4N80E 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Motorola Mobility LLC IRFZ46ZSTRLPBF vs MTW4N80E
AUIRF3710ZSTRR Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3 International Rectifier IRFZ46ZSTRLPBF vs AUIRF3710ZSTRR
IRF1405STRLPBF Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRFZ46ZSTRLPBF vs IRF1405STRLPBF
AUIRF1405ZSTRL Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRFZ46ZSTRLPBF vs AUIRF1405ZSTRL
AUIRFZ48ZSTRR Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRFZ46ZSTRLPBF vs AUIRFZ48ZSTRR

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