Manufacturer | Description | Price Range | Set Alert | Details |
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Harris Semiconductor | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | $0.7445 / $0.8759 |
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Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | $0.2672 / $0.9500 |
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International Rectifier | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | $0.5000 / $2.9680 |
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Infineon Technologies AG | MOSFET N-CH 200V 5A I-PAK |
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Honest Han | - |
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Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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Intersil Corporation | 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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Rochester Electronics LLC | 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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Samsung Semiconductor | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 |
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