Part Details for IRFZ24N by NXP Semiconductors
Overview of IRFZ24N by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFZ24N
Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | N-channel enhancement mode TrenchMOS transistor | 191000 |
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$0.1420 / $0.2120 | Buy Now |
Part Details for IRFZ24N
IRFZ24N CAD Models
IRFZ24N Part Data Attributes:
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IRFZ24N
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
IRFZ24N
NXP Semiconductors
17A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | NXP | |
Additional Feature | ESD PROTECTED | |
Avalanche Energy Rating (Eas) | 30 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 45 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFZ24N
This table gives cross-reference parts and alternative options found for IRFZ24N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFZ24N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFZ24NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRFZ24N vs IRFZ24NPBF |
BUZ71 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Siliconix | IRFZ24N vs BUZ71 |
IRFZ24NPBF | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFZ24N vs IRFZ24NPBF |
SSP15N06 | Power Field-Effect Transistor, 16A I(D), 60V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | IRFZ24N vs SSP15N06 |
BUZ71 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | IRFZ24N vs BUZ71 |
BUZ71 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Fairchild Semiconductor Corporation | IRFZ24N vs BUZ71 |
MTP15N05E | 15A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Texas Instruments | IRFZ24N vs MTP15N05E |
BUZ71 | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFZ24N vs BUZ71 |
IRFZ24N,127 | IRFZ24N | NXP Semiconductors | IRFZ24N vs IRFZ24N,127 |
BUZ71 | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | IRFZ24N vs BUZ71 |