IRFY9140MEBPBF
Description: 13A, 100V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB

Overview of IRFY9140MEBPBF by Infineon Technologies AG

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 10 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

CAD Models for IRFY9140MEBPBF by Infineon Technologies AG
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Part Data Attributes for IRFY9140MEBPBF by Infineon Technologies AG

IRFY9140MEBPBF
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code
compliant
ECCN Code
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
13 A
Drain-source On Resistance-Max
0.24 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-257AB
JESD-30 Code
S-MSFM-P3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
METAL
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
52 A
Qualification Status
Not Qualified
Reference Standard
CECC
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFY9140MEBPBF
    Infineon Technologies AG
    13A, 100V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB
    VS

Alternate Parts for IRFY9140MEBPBF

This table gives cross-reference parts and alternative options found for IRFY9140MEBPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY9140MEBPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFY9140EBPBF Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9140MEBPBF vs IRFY9140EBPBF
IRFY9140EB Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9140MEBPBF vs IRFY9140EB
IRFY9140MED Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG IRFY9140MEBPBF vs IRFY9140MED
IRFY9140 Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors IRFY9140MEBPBF vs IRFY9140
IRFY9140ME Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9140MEBPBF vs IRFY9140ME
IRFY9140MEPBF 13A, 100V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY9140MEBPBF vs IRFY9140MEPBF
IRFY9140CMPBF Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN International Rectifier IRFY9140MEBPBF vs IRFY9140CMPBF
SHD226409 Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257, 3 PIN Sensitron Semiconductors IRFY9140MEBPBF vs SHD226409
IRFY9140MEAPBF 13A, 100V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY9140MEBPBF vs IRFY9140MEAPBF
IRFY9140XR1 Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Resistors IRFY9140MEBPBF vs IRFY9140XR1

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