IRFY9140ME
Description: Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

Overview of IRFY9140ME by International Rectifier

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Part Data Attributes for IRFY9140ME by International Rectifier

IRFY9140ME
International Rectifier
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
13 A
Drain-source On Resistance-Max
0.24 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-257AB
JESD-30 Code
S-MSFM-P3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
SQUARE
Package Style
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
Power Dissipation Ambient-Max
60 W
Pulsed Drain Current-Max (IDM)
52 A
Qualification Status
Not Qualified
Reference Standard
CECC
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
150 ns
Turn-on Time-Max (ton)
120 ns
Want to compare parts?
  1. IRFY9140ME
    International Rectifier
    Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB
    VS

Alternate Parts for IRFY9140ME

This table gives cross-reference parts and alternative options found for IRFY9140ME. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFY9140ME, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFY9140MEPBF Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9140ME vs IRFY9140MEPBF
IRFY9140ME Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG IRFY9140ME vs IRFY9140ME
IRFY9140MEPBF 13A, 100V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY9140ME vs IRFY9140MEPBF
Part Number Description Manufacturer Compare
IRFY9140EBPBF Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9140ME vs IRFY9140EBPBF
IRFY9140EB Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB International Rectifier IRFY9140ME vs IRFY9140EB
IRFY9140MED Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, Infineon Technologies AG IRFY9140ME vs IRFY9140MED
IRFY9140 Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors IRFY9140ME vs IRFY9140
IRFY9140MEPBF 13A, 100V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY9140ME vs IRFY9140MEPBF
IRFY9140CMPBF Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN International Rectifier IRFY9140ME vs IRFY9140CMPBF
SHD226409 Power Field-Effect Transistor, 13A I(D), 100V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, METAL, TO-257, 3 PIN Sensitron Semiconductors IRFY9140ME vs SHD226409
IRFY9140MEAPBF 13A, 100V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB Infineon Technologies AG IRFY9140ME vs IRFY9140MEAPBF
IRFY9140XR1 Power Field-Effect Transistor, 15.8A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN TT Electronics Resistors IRFY9140ME vs IRFY9140XR1
IRFY9140CMSCX Power Field-Effect Transistor, 15.8A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, Infineon Technologies AG IRFY9140ME vs IRFY9140CMSCX

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