Datasheets
IRFU221 by:

4.6A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

Part Details for IRFU221 by Rochester Electronics LLC

Overview of IRFU221 by Rochester Electronics LLC

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Part Details for IRFU221

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IRFU221 Part Data Attributes

IRFU221 Rochester Electronics LLC
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IRFU221 Rochester Electronics LLC 4.6A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Avalanche Energy Rating (Eas) 85 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 4.6 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFU221

This table gives cross-reference parts and alternative options found for IRFU221. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFU221, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFU210PBF Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3 Vishay Siliconix IRFU221 vs IRFU210PBF
FQU7N20TU Power Field-Effect Transistor, 5.3A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation IRFU221 vs FQU7N20TU
IRFU220A Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 Fairchild Semiconductor Corporation IRFU221 vs IRFU220A
MTD2N20-1 Power Field-Effect Transistor, 2A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 Motorola Semiconductor Products IRFU221 vs MTD2N20-1
FQU4N20TU Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 Fairchild Semiconductor Corporation IRFU221 vs FQU4N20TU
MTD4N20-1 Power Field-Effect Transistor, 4A I(D), 200V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 Motorola Semiconductor Products IRFU221 vs MTD4N20-1
IRFU210PBF Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 International Rectifier IRFU221 vs IRFU210PBF
IRFU212 Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor IRFU221 vs IRFU212
IRFU210A Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 Samsung Semiconductor IRFU221 vs IRFU210A
IRFU222 Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor IRFU221 vs IRFU222

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