IRFU221
vs
MTD2N20-1
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
MOTOROLA INC
Reach Compliance Code
unknown
unknown
Avalanche Energy Rating (Eas)
85 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
200 V
Drain Current-Max (ID)
4.6 A
2 A
Drain-source On Resistance-Max
0.8 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251AA
TO-251
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
18 A
11 A
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Rohs Code
Package Description
IN-LINE, R-PSIP-T3
ECCN Code
EAR99
HTS Code
8541.29.00.95
JESD-609 Code
e0
Operating Temperature-Max
150 °C
Power Dissipation Ambient-Max
25 W
Power Dissipation-Max (Abs)
25 W
Terminal Finish
TIN LEAD
Compare IRFU221 with alternatives
Compare MTD2N20-1 with alternatives