Part Details for IRFS4610PBF by Infineon Technologies AG
Overview of IRFS4610PBF by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFS4610PBF
IRFS4610PBF CAD Models
IRFS4610PBF Part Data Attributes
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IRFS4610PBF
Infineon Technologies AG
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Datasheet
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IRFS4610PBF
Infineon Technologies AG
Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 370 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 73 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 290 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS4610PBF
This table gives cross-reference parts and alternative options found for IRFS4610PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS4610PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PSMN015-100YLX | PSMN015-100YL - N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin | Nexperia | IRFS4610PBF vs PSMN015-100YLX |
| APT10M19SVR | Power Field-Effect Transistor | Microchip Technology Inc | IRFS4610PBF vs APT10M19SVR |
| IRFS4610TRLPBF | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFS4610PBF vs IRFS4610TRLPBF |
| SML10S75XX | Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | TT Electronics Resistors | IRFS4610PBF vs SML10S75XX |
| NVB6411ANT4G | Power MOSFET 100V, 72A, 14, mohm, Single N-Channel, D2PAK. Power MOSFET 100V, 72A, 14, mohm, Single N-Channel, D2PAK., D2PAK 2 LEAD, 800-REEL, Automotive Qualified | onsemi | IRFS4610PBF vs NVB6411ANT4G |
| IRFP4710 | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | Infineon Technologies AG | IRFS4610PBF vs IRFP4710 |
| IRFP4710PBF | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRFS4610PBF vs IRFP4710PBF |
| IXTT75N10 | Power Field-Effect Transistor, 75A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | IXYS Corporation | IRFS4610PBF vs IXTT75N10 |
| IRFB4610TRLPBF | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRFS4610PBF vs IRFB4610TRLPBF |
| APT10M19SVRG | Power Field-Effect Transistor, 75A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IRFS4610PBF vs APT10M19SVRG |